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Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts. / Eberst, Alexander; Zamchiy, Alexandr; Qiu, Kaifu и др.

2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. стр. 300-302 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Eberst, A, Zamchiy, A, Qiu, K, Lambertz, A, Duan, W, Li, S, Bittkau, K, Haas, S, Finger, F, Kirchartz, T, Rau, U & Ding, K 2021, Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts. в 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., стр. 300-302, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, Соединенные Штаты Америки, 20.06.2021. https://doi.org/10.1109/PVSC43889.2021.9518496

APA

Eberst, A., Zamchiy, A., Qiu, K., Lambertz, A., Duan, W., Li, S., Bittkau, K., Haas, S., Finger, F., Kirchartz, T., Rau, U., & Ding, K. (2021). Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts. в 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (стр. 300-302). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518496

Vancouver

Eberst A, Zamchiy A, Qiu K, Lambertz A, Duan W, Li S и др. Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts. в 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. стр. 300-302. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518496

Author

Eberst, Alexander ; Zamchiy, Alexandr ; Qiu, Kaifu и др. / Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts. 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. стр. 300-302 (Conference Record of the IEEE Photovoltaic Specialists Conference).

BibTeX

@inproceedings{9caef9d25b8a4ab9b3f9a3c78cf7e52e,
title = "Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts",
abstract = "A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play an important role for the solar cell, which can easily be reduced by applying an additional MgF2 coating. The deposition of the coating degrades the passivation quality of the contact but can be cured, eventually leading to a certified short circuit current density of 40.9 mA/cm2 and efficiency of 23.99%. Afterwards, a roadmap to a theoretical efficiency of 25% is presented.",
keywords = "passivating contact, silicon carbide, silicon solar cell, transparent passivating contact",
author = "Alexander Eberst and Alexandr Zamchiy and Kaifu Qiu and Andreas Lambertz and Weiyuan Duan and Shenghao Li and Karsten Bittkau and Stefan Haas and Friedhelm Finger and Thomas Kirchartz and Uwe Rau and Kaining Ding",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "20",
doi = "10.1109/PVSC43889.2021.9518496",
language = "English",
isbn = "9781665419222",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "300--302",
booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",
address = "United States",

}

RIS

TY - GEN

T1 - Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts

AU - Eberst, Alexander

AU - Zamchiy, Alexandr

AU - Qiu, Kaifu

AU - Lambertz, Andreas

AU - Duan, Weiyuan

AU - Li, Shenghao

AU - Bittkau, Karsten

AU - Haas, Stefan

AU - Finger, Friedhelm

AU - Kirchartz, Thomas

AU - Rau, Uwe

AU - Ding, Kaining

N1 - Publisher Copyright: © 2021 IEEE.

PY - 2021/6/20

Y1 - 2021/6/20

N2 - A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play an important role for the solar cell, which can easily be reduced by applying an additional MgF2 coating. The deposition of the coating degrades the passivation quality of the contact but can be cured, eventually leading to a certified short circuit current density of 40.9 mA/cm2 and efficiency of 23.99%. Afterwards, a roadmap to a theoretical efficiency of 25% is presented.

AB - A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play an important role for the solar cell, which can easily be reduced by applying an additional MgF2 coating. The deposition of the coating degrades the passivation quality of the contact but can be cured, eventually leading to a certified short circuit current density of 40.9 mA/cm2 and efficiency of 23.99%. Afterwards, a roadmap to a theoretical efficiency of 25% is presented.

KW - passivating contact

KW - silicon carbide

KW - silicon solar cell

KW - transparent passivating contact

UR - http://www.scopus.com/inward/record.url?scp=85115925224&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/fcc932f4-d0b7-376d-ba4b-83c3b16d3083/

U2 - 10.1109/PVSC43889.2021.9518496

DO - 10.1109/PVSC43889.2021.9518496

M3 - Conference contribution

AN - SCOPUS:85115925224

SN - 9781665419222

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 300

EP - 302

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

ID: 34348217