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A High-Power Semiconductor Generator for an Atomic Injector. / Kolmogorov, V. V.; Styuf, A. S.; Shubin, E. I.

в: Instruments and Experimental Techniques, Том 61, № 5, 01.09.2018, стр. 696-700.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kolmogorov, VV, Styuf, AS & Shubin, EI 2018, 'A High-Power Semiconductor Generator for an Atomic Injector', Instruments and Experimental Techniques, Том. 61, № 5, стр. 696-700. https://doi.org/10.1134/S002044121805007X

APA

Kolmogorov, V. V., Styuf, A. S., & Shubin, E. I. (2018). A High-Power Semiconductor Generator for an Atomic Injector. Instruments and Experimental Techniques, 61(5), 696-700. https://doi.org/10.1134/S002044121805007X

Vancouver

Kolmogorov VV, Styuf AS, Shubin EI. A High-Power Semiconductor Generator for an Atomic Injector. Instruments and Experimental Techniques. 2018 сент. 1;61(5):696-700. doi: 10.1134/S002044121805007X

Author

Kolmogorov, V. V. ; Styuf, A. S. ; Shubin, E. I. / A High-Power Semiconductor Generator for an Atomic Injector. в: Instruments and Experimental Techniques. 2018 ; Том 61, № 5. стр. 696-700.

BibTeX

@article{e12e0ed5b0de4bbb9611cfd70ee56be2,
title = "A High-Power Semiconductor Generator for an Atomic Injector",
abstract = "An atomic injector with a beam power of 1 MW for heating plasma in the TCV tokamak (Lausanne, Switzerland) by a beam of neutral atoms was developed and put into operation in 2015–2016 at the Budker Institute of Nuclear Physics SB RAS (Novosibirsk). Plasma in the injector is formed in a plasma emitter by a high-frequency magnetic field, which is created by a high-power semiconductor generator with an output power of 40 kW at a frequency of 4 MHz. The facility operates in the pulse mode with a pulse duration of 2 s and a pause of 5 min. The generator is manufactured in the form of a modular system consisting of 16 identical generator modules, whose high-frequency power is summed, control modules, and a power-supply source. The generator allows modulation of the output power in the range of 30–100% by changing the power-supply voltage. The general structure of the generator and its elements and the results of its commissioning are presented.",
author = "Kolmogorov, {V. V.} and Styuf, {A. S.} and Shubin, {E. I.}",
year = "2018",
month = sep,
day = "1",
doi = "10.1134/S002044121805007X",
language = "English",
volume = "61",
pages = "696--700",
journal = "Instruments and Experimental Techniques",
issn = "0020-4412",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "5",

}

RIS

TY - JOUR

T1 - A High-Power Semiconductor Generator for an Atomic Injector

AU - Kolmogorov, V. V.

AU - Styuf, A. S.

AU - Shubin, E. I.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - An atomic injector with a beam power of 1 MW for heating plasma in the TCV tokamak (Lausanne, Switzerland) by a beam of neutral atoms was developed and put into operation in 2015–2016 at the Budker Institute of Nuclear Physics SB RAS (Novosibirsk). Plasma in the injector is formed in a plasma emitter by a high-frequency magnetic field, which is created by a high-power semiconductor generator with an output power of 40 kW at a frequency of 4 MHz. The facility operates in the pulse mode with a pulse duration of 2 s and a pause of 5 min. The generator is manufactured in the form of a modular system consisting of 16 identical generator modules, whose high-frequency power is summed, control modules, and a power-supply source. The generator allows modulation of the output power in the range of 30–100% by changing the power-supply voltage. The general structure of the generator and its elements and the results of its commissioning are presented.

AB - An atomic injector with a beam power of 1 MW for heating plasma in the TCV tokamak (Lausanne, Switzerland) by a beam of neutral atoms was developed and put into operation in 2015–2016 at the Budker Institute of Nuclear Physics SB RAS (Novosibirsk). Plasma in the injector is formed in a plasma emitter by a high-frequency magnetic field, which is created by a high-power semiconductor generator with an output power of 40 kW at a frequency of 4 MHz. The facility operates in the pulse mode with a pulse duration of 2 s and a pause of 5 min. The generator is manufactured in the form of a modular system consisting of 16 identical generator modules, whose high-frequency power is summed, control modules, and a power-supply source. The generator allows modulation of the output power in the range of 30–100% by changing the power-supply voltage. The general structure of the generator and its elements and the results of its commissioning are presented.

UR - http://www.scopus.com/inward/record.url?scp=85053869920&partnerID=8YFLogxK

U2 - 10.1134/S002044121805007X

DO - 10.1134/S002044121805007X

M3 - Article

AN - SCOPUS:85053869920

VL - 61

SP - 696

EP - 700

JO - Instruments and Experimental Techniques

JF - Instruments and Experimental Techniques

SN - 0020-4412

IS - 5

ER -

ID: 16757619