Research output: Contribution to journal › Article › peer-review
Wigner crystallization of localized electrons in a flash memory. / Gritsenko, V. A.; Mahmoodian, M. M.; Mahmoodian, Mehrdad M. et al.
In: Applied Physics Letters, Vol. 127, No. 22, 222901, 02.12.2025.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Wigner crystallization of localized electrons in a flash memory
AU - Gritsenko, V. A.
AU - Mahmoodian, M. M.
AU - Mahmoodian, Mehrdad M.
AU - Gismatulin, A. A.
AU - Entin, M. V.
N1 - Gritsenko, V. A., Mahmoodian M. M., Mahmoodian, M. M., Gismatulin, A. A, Entin, M. V. Wigner crystallization of localized electrons in a flash memory // Applied Physics Letters. - 2025. - Т. 127. - № 22. - 222901. https://doi.org/10.1063/5.0288664
PY - 2025/12/2
Y1 - 2025/12/2
N2 - The operating principle of modern flash memory is based on the localization of electrons at dielectric traps and a subsequent change in two-dimensional semiconductor channel resistance. Amorphous silicon nitride (Si3N4) serves as a charge storage medium in a flash memory. In previous studies, Wigner crystallization driven by Coulomb interactions among free electrons was extensively investigated. For localized electrons, Coulomb repulsion limits the maximum charge density reachable in the dielectric. This study focuses on investigating the structural ordering, specifically Wigner crystallization, of localized electrons at deep traps (≈1.5 eV) in Si3N4 at room temperature. Coulomb repulsion of electrons localized at traps was experimentally observed. Experimentally, it is proven that the concentration of localized electrons is two orders of magnitude lower than that of neutral traps, indicating Coulomb repulsion between localized electrons. In this work, we investigate the structural ordering in a one-dimensional cluster of localized electrons using numerical simulations. The correlation functions of localized electrons demonstrate their Wigner crystallization. The study of Wigner ordering of localized electrons reveals that the memory properties of flash devices are governed by Coulomb interactions among these electrons rather than by the concentration of neutral traps.
AB - The operating principle of modern flash memory is based on the localization of electrons at dielectric traps and a subsequent change in two-dimensional semiconductor channel resistance. Amorphous silicon nitride (Si3N4) serves as a charge storage medium in a flash memory. In previous studies, Wigner crystallization driven by Coulomb interactions among free electrons was extensively investigated. For localized electrons, Coulomb repulsion limits the maximum charge density reachable in the dielectric. This study focuses on investigating the structural ordering, specifically Wigner crystallization, of localized electrons at deep traps (≈1.5 eV) in Si3N4 at room temperature. Coulomb repulsion of electrons localized at traps was experimentally observed. Experimentally, it is proven that the concentration of localized electrons is two orders of magnitude lower than that of neutral traps, indicating Coulomb repulsion between localized electrons. In this work, we investigate the structural ordering in a one-dimensional cluster of localized electrons using numerical simulations. The correlation functions of localized electrons demonstrate their Wigner crystallization. The study of Wigner ordering of localized electrons reveals that the memory properties of flash devices are governed by Coulomb interactions among these electrons rather than by the concentration of neutral traps.
UR - https://www.scopus.com/pages/publications/105023839200
UR - https://www.mendeley.com/catalogue/596a9f2e-13ea-3aac-989d-9da54ea0ec3f/
U2 - 10.1063/5.0288664
DO - 10.1063/5.0288664
M3 - Article
VL - 127
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 222901
ER -
ID: 72572093