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Weak antilocalization to weak localization transition in Bi2Se3 films on graphene. / Stepina, N. P.; Golyashov, V. A.; Nenashev, A. V. et al.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 135, 114969, 01.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Stepina, NP, Golyashov, VA, Nenashev, AV, Tereshchenko, OE, Kokh, KA, Kirienko, VV, Koptev, ES, Goldyreva, ES, Rybin, MG, Obraztsova, ED & Antonova, IV 2022, 'Weak antilocalization to weak localization transition in Bi2Se3 films on graphene', Physica E: Low-Dimensional Systems and Nanostructures, vol. 135, 114969. https://doi.org/10.1016/j.physe.2021.114969

APA

Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D., & Antonova, I. V. (2022). Weak antilocalization to weak localization transition in Bi2Se3 films on graphene. Physica E: Low-Dimensional Systems and Nanostructures, 135, [114969]. https://doi.org/10.1016/j.physe.2021.114969

Vancouver

Stepina NP, Golyashov VA, Nenashev AV, Tereshchenko OE, Kokh KA, Kirienko VV et al. Weak antilocalization to weak localization transition in Bi2Se3 films on graphene. Physica E: Low-Dimensional Systems and Nanostructures. 2022 Jan;135:114969. doi: 10.1016/j.physe.2021.114969

Author

Stepina, N. P. ; Golyashov, V. A. ; Nenashev, A. V. et al. / Weak antilocalization to weak localization transition in Bi2Se3 films on graphene. In: Physica E: Low-Dimensional Systems and Nanostructures. 2022 ; Vol. 135.

BibTeX

@article{497b2391a4e042ec8890dbbc6aefc267,
title = "Weak antilocalization to weak localization transition in Bi2Se3 films on graphene",
abstract = "Magneto-transport properties were studied on thin films of a 3D topological insulator (TI) Bi2Se3 grown on graphene (Gr) by physical vapor deposition. It was shown that the main contribution to the conductance is from the bulk states, whereas magnetoresistance is determined by both surface and bulk channels. The input of the charge transport over the surface states in the Si/SiO2/Gr/Bi2Se3 structure reveals itself in the weak antilocalization effect. The transition from a weak antilocalization to a weak localization is observed with decreasing the film thickness. The band bending on both interfaces makes it possible to explain the contribution to a weak antilocalization from different surfaces at different TI film thicknesses.",
keywords = "Charge transport, Surface states, Topological insulator, Weak antilocalization",
author = "Stepina, {N. P.} and Golyashov, {V. A.} and Nenashev, {A. V.} and Tereshchenko, {O. E.} and Kokh, {K. A.} and Kirienko, {V. V.} and Koptev, {E. S.} and Goldyreva, {E. S.} and Rybin, {M. G.} and Obraztsova, {E. D.} and Antonova, {I. V.}",
note = "Funding Information: The authors thank Prof. L.E. Golub for the useful discussion. The work was supported by the grant of the Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2022",
month = jan,
doi = "10.1016/j.physe.2021.114969",
language = "English",
volume = "135",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

AU - Stepina, N. P.

AU - Golyashov, V. A.

AU - Nenashev, A. V.

AU - Tereshchenko, O. E.

AU - Kokh, K. A.

AU - Kirienko, V. V.

AU - Koptev, E. S.

AU - Goldyreva, E. S.

AU - Rybin, M. G.

AU - Obraztsova, E. D.

AU - Antonova, I. V.

N1 - Funding Information: The authors thank Prof. L.E. Golub for the useful discussion. The work was supported by the grant of the Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/1

Y1 - 2022/1

N2 - Magneto-transport properties were studied on thin films of a 3D topological insulator (TI) Bi2Se3 grown on graphene (Gr) by physical vapor deposition. It was shown that the main contribution to the conductance is from the bulk states, whereas magnetoresistance is determined by both surface and bulk channels. The input of the charge transport over the surface states in the Si/SiO2/Gr/Bi2Se3 structure reveals itself in the weak antilocalization effect. The transition from a weak antilocalization to a weak localization is observed with decreasing the film thickness. The band bending on both interfaces makes it possible to explain the contribution to a weak antilocalization from different surfaces at different TI film thicknesses.

AB - Magneto-transport properties were studied on thin films of a 3D topological insulator (TI) Bi2Se3 grown on graphene (Gr) by physical vapor deposition. It was shown that the main contribution to the conductance is from the bulk states, whereas magnetoresistance is determined by both surface and bulk channels. The input of the charge transport over the surface states in the Si/SiO2/Gr/Bi2Se3 structure reveals itself in the weak antilocalization effect. The transition from a weak antilocalization to a weak localization is observed with decreasing the film thickness. The band bending on both interfaces makes it possible to explain the contribution to a weak antilocalization from different surfaces at different TI film thicknesses.

KW - Charge transport

KW - Surface states

KW - Topological insulator

KW - Weak antilocalization

UR - http://www.scopus.com/inward/record.url?scp=85115180791&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47067637

U2 - 10.1016/j.physe.2021.114969

DO - 10.1016/j.physe.2021.114969

M3 - Article

AN - SCOPUS:85115180791

VL - 135

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

M1 - 114969

ER -

ID: 34255936