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Two-Dimensional Semimetal in HgTe-Based Quantum Wells. / Kvon, Z. D.; Olshanetsky, E. B.; Kozlov, D. A. et al.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ed. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. p. 29-48.

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

Harvard

Kvon, ZD, Olshanetsky, EB, Kozlov, DA, Mikhailov, NN & Dvoretsky, SA 2017, Two-Dimensional Semimetal in HgTe-Based Quantum Wells. in AV Latyshev, AV Dvurechenskii & AL Aseev (eds), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., pp. 29-48. https://doi.org/10.1016/B978-0-12-810512-2.00002-0

APA

Kvon, Z. D., Olshanetsky, E. B., Kozlov, D. A., Mikhailov, N. N., & Dvoretsky, S. A. (2017). Two-Dimensional Semimetal in HgTe-Based Quantum Wells. In AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Eds.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (pp. 29-48). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00002-0

Vancouver

Kvon ZD, Olshanetsky EB, Kozlov DA, Mikhailov NN, Dvoretsky SA. Two-Dimensional Semimetal in HgTe-Based Quantum Wells. In Latyshev AV, Dvurechenskii AV, Aseev AL, editors, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. p. 29-48 doi: 10.1016/B978-0-12-810512-2.00002-0

Author

Kvon, Z. D. ; Olshanetsky, E. B. ; Kozlov, D. A. et al. / Two-Dimensional Semimetal in HgTe-Based Quantum Wells. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. editor / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Inc., 2017. pp. 29-48

BibTeX

@inbook{2f83aa1582ce46e0acdad24252c5548c,
title = "Two-Dimensional Semimetal in HgTe-Based Quantum Wells",
abstract = "In this chapter results are reported from a study of a new two-dimensional electron system, a two-dimensional semimetal, that is observed in wide quantum wells based on mercury telluride, which have an inverted band spectrum. Magnetotransport experiments confirm the existence of a semimetal state in quantum wells with (013) and (112) orientations, and thicknesses of 18-21. nm. These experiments show that the band overlap is δ=3-5. meV. A comparison of the experimentally determined δ with a theoretical calculation of the energy spectrum reveals the fundamental role of strain effects in the formation of the semimetal state. Scattering processes in the two-dimensional semimetal are studied, and it is found that the jump in the electron mobility during electronic metal-two-dimensional semimetal transitions is caused by screening of electron scattering on impurities by holes. The substantial anomalous rise in the resistivity of the two-dimensional semimetal with an increasing temperature is caused by electron-hole scattering. This is the first observation of the direct effect of interparticle scattering (Landau mechanism) on the resistivity of metals. The properties of two-dimensional semimetals in the quantum Hall effect regime are examined. Primary attention is paid to the observed suppression of strong localization under the conditions of the quantum Hall effect. It is shown that, in a strong magnetic field, the two-component electron-hole plasma has fundamentally different topological properties from those of ordinary single-component (electron or hole) plasma. It is suggested that they lead to the appearance of an infinite set of conducting current states and to the suppression of localization.",
keywords = "2D semimetal, 2D topological insulator, HgTe, Quantum well, ELECTRON-GAS, RANDOM MAGNETIC-FIELD",
author = "Kvon, {Z. D.} and Olshanetsky, {E. B.} and Kozlov, {D. A.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00002-0",
language = "English",
isbn = "9780128105122",
pages = "29--48",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures",
publisher = "Elsevier Science Inc.",
address = "United States",

}

RIS

TY - CHAP

T1 - Two-Dimensional Semimetal in HgTe-Based Quantum Wells

AU - Kvon, Z. D.

AU - Olshanetsky, E. B.

AU - Kozlov, D. A.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

N1 - Publisher Copyright: © 2017 Elsevier Inc. All rights reserved.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this chapter results are reported from a study of a new two-dimensional electron system, a two-dimensional semimetal, that is observed in wide quantum wells based on mercury telluride, which have an inverted band spectrum. Magnetotransport experiments confirm the existence of a semimetal state in quantum wells with (013) and (112) orientations, and thicknesses of 18-21. nm. These experiments show that the band overlap is δ=3-5. meV. A comparison of the experimentally determined δ with a theoretical calculation of the energy spectrum reveals the fundamental role of strain effects in the formation of the semimetal state. Scattering processes in the two-dimensional semimetal are studied, and it is found that the jump in the electron mobility during electronic metal-two-dimensional semimetal transitions is caused by screening of electron scattering on impurities by holes. The substantial anomalous rise in the resistivity of the two-dimensional semimetal with an increasing temperature is caused by electron-hole scattering. This is the first observation of the direct effect of interparticle scattering (Landau mechanism) on the resistivity of metals. The properties of two-dimensional semimetals in the quantum Hall effect regime are examined. Primary attention is paid to the observed suppression of strong localization under the conditions of the quantum Hall effect. It is shown that, in a strong magnetic field, the two-component electron-hole plasma has fundamentally different topological properties from those of ordinary single-component (electron or hole) plasma. It is suggested that they lead to the appearance of an infinite set of conducting current states and to the suppression of localization.

AB - In this chapter results are reported from a study of a new two-dimensional electron system, a two-dimensional semimetal, that is observed in wide quantum wells based on mercury telluride, which have an inverted band spectrum. Magnetotransport experiments confirm the existence of a semimetal state in quantum wells with (013) and (112) orientations, and thicknesses of 18-21. nm. These experiments show that the band overlap is δ=3-5. meV. A comparison of the experimentally determined δ with a theoretical calculation of the energy spectrum reveals the fundamental role of strain effects in the formation of the semimetal state. Scattering processes in the two-dimensional semimetal are studied, and it is found that the jump in the electron mobility during electronic metal-two-dimensional semimetal transitions is caused by screening of electron scattering on impurities by holes. The substantial anomalous rise in the resistivity of the two-dimensional semimetal with an increasing temperature is caused by electron-hole scattering. This is the first observation of the direct effect of interparticle scattering (Landau mechanism) on the resistivity of metals. The properties of two-dimensional semimetals in the quantum Hall effect regime are examined. Primary attention is paid to the observed suppression of strong localization under the conditions of the quantum Hall effect. It is shown that, in a strong magnetic field, the two-component electron-hole plasma has fundamentally different topological properties from those of ordinary single-component (electron or hole) plasma. It is suggested that they lead to the appearance of an infinite set of conducting current states and to the suppression of localization.

KW - 2D semimetal

KW - 2D topological insulator

KW - HgTe

KW - Quantum well

KW - ELECTRON-GAS

KW - RANDOM MAGNETIC-FIELD

UR - http://www.scopus.com/inward/record.url?scp=85022217484&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00002-0

DO - 10.1016/B978-0-12-810512-2.00002-0

M3 - Chapter

SN - 9780128105122

SP - 29

EP - 48

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

ID: 21792638