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Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure. / Prudkoglyad, V. A.; Olshanetsky, E. B.; Kvon, Z. D. et al.

In: Physical Review B, Vol. 98, No. 15, 155437, 24.10.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Prudkoglyad, VA, Olshanetsky, EB, Kvon, ZD, Pudalov, VM, Mikhailov, NN & Dvoretsky, SA 2018, 'Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure', Physical Review B, vol. 98, no. 15, 155437. https://doi.org/10.1103/PhysRevB.98.155437

APA

Prudkoglyad, V. A., Olshanetsky, E. B., Kvon, Z. D., Pudalov, V. M., Mikhailov, N. N., & Dvoretsky, S. A. (2018). Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure. Physical Review B, 98(15), [155437]. https://doi.org/10.1103/PhysRevB.98.155437

Vancouver

Prudkoglyad VA, Olshanetsky EB, Kvon ZD, Pudalov VM, Mikhailov NN, Dvoretsky SA. Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure. Physical Review B. 2018 Oct 24;98(15):155437. doi: 10.1103/PhysRevB.98.155437

Author

Prudkoglyad, V. A. ; Olshanetsky, E. B. ; Kvon, Z. D. et al. / Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure. In: Physical Review B. 2018 ; Vol. 98, No. 15.

BibTeX

@article{78833ff8c8d34cc08cd1ebc80ab24bdf,
title = "Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure",
abstract = "We report results of systematic measurements of charge transport properties of the 20.5-nm-wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure, transport is well described by the two-band semiclassical model. In contrast, at elevated pressure, we observed nonmonotonic pressure dependence of resistivity at the {"}charge neutrality point.{"} For pressures lower than ≈9kbar, resistivity grows with pressure, in accord with expectations from the band structure calculations and the model incorporating effects of disorder on transport in two-dimensional (2D) semimetals with indirect band overlap. For higher pressures, the resistivity saturates and starts decreasing upon further increase of pressure. Above ≈14kbar the resistance value and the magnetoresistance character sharply change, which may indicate significant change of electronic structure due to new electronic phase formation or some structural transitions. The data also reveal strong influence of disorder on transport in 2D electron-hole system with a small band overlap.",
keywords = "ELECTRON-HOLE SYSTEM, EXCITONIC INSULATOR, TRANSITION, PHASE, INAS, GAS",
author = "Prudkoglyad, {V. A.} and Olshanetsky, {E. B.} and Kvon, {Z. D.} and Pudalov, {V. M.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
note = "Publisher Copyright: {\textcopyright} 2018 American Physical Society.",
year = "2018",
month = oct,
day = "24",
doi = "10.1103/PhysRevB.98.155437",
language = "English",
volume = "98",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "15",

}

RIS

TY - JOUR

T1 - Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

AU - Prudkoglyad, V. A.

AU - Olshanetsky, E. B.

AU - Kvon, Z. D.

AU - Pudalov, V. M.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

N1 - Publisher Copyright: © 2018 American Physical Society.

PY - 2018/10/24

Y1 - 2018/10/24

N2 - We report results of systematic measurements of charge transport properties of the 20.5-nm-wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure, transport is well described by the two-band semiclassical model. In contrast, at elevated pressure, we observed nonmonotonic pressure dependence of resistivity at the "charge neutrality point." For pressures lower than ≈9kbar, resistivity grows with pressure, in accord with expectations from the band structure calculations and the model incorporating effects of disorder on transport in two-dimensional (2D) semimetals with indirect band overlap. For higher pressures, the resistivity saturates and starts decreasing upon further increase of pressure. Above ≈14kbar the resistance value and the magnetoresistance character sharply change, which may indicate significant change of electronic structure due to new electronic phase formation or some structural transitions. The data also reveal strong influence of disorder on transport in 2D electron-hole system with a small band overlap.

AB - We report results of systematic measurements of charge transport properties of the 20.5-nm-wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure, transport is well described by the two-band semiclassical model. In contrast, at elevated pressure, we observed nonmonotonic pressure dependence of resistivity at the "charge neutrality point." For pressures lower than ≈9kbar, resistivity grows with pressure, in accord with expectations from the band structure calculations and the model incorporating effects of disorder on transport in two-dimensional (2D) semimetals with indirect band overlap. For higher pressures, the resistivity saturates and starts decreasing upon further increase of pressure. Above ≈14kbar the resistance value and the magnetoresistance character sharply change, which may indicate significant change of electronic structure due to new electronic phase formation or some structural transitions. The data also reveal strong influence of disorder on transport in 2D electron-hole system with a small band overlap.

KW - ELECTRON-HOLE SYSTEM

KW - EXCITONIC INSULATOR

KW - TRANSITION

KW - PHASE

KW - INAS

KW - GAS

UR - http://www.scopus.com/inward/record.url?scp=85055857948&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.98.155437

DO - 10.1103/PhysRevB.98.155437

M3 - Article

AN - SCOPUS:85055857948

VL - 98

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 15

M1 - 155437

ER -

ID: 17288543