TY - JOUR

T1 - Two-Dimensional Semimetal HgTe in 14-nm-Thick Quantum Wells

AU - Vasil’ev, N. N.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

AU - Ganichev, S. D.

N1 - Funding Information: This work was supported by the Russian Ministry of Science and Higher Education (agreement no. 075-15-2020-797, project no. 13.1902.21.0024). S.D. Ganichev acknowledges the support of the Foundation for Polish Science (IRA Program, grant MAB/2018/9, CENTERA) and Volkswagen Stiftung Program (grant no. 97738). Publisher Copyright: © 2021, Pleiades Publishing, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/4

Y1 - 2021/4

N2 - A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d =18−22 nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron photoresistance is measured as a function of the electron density (Ns) and it is shown that the amplitude of the electron cyclotron photoresistance decreases with decreasing density, and the electron cyclotron photoresistance is not detected at Ns < 5 × 109 cm−2. Thus, the two-dimensional semimetal under study does not exhibit the Ns-independent electron cyclotron photoresistance, which was earlier observed in the two-dimensional semimetal arising near the (100) surface. This is assumingly due to a significantly lower (by more than an order of magnitude) electron mobility in the system under study.

AB - A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d =18−22 nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron photoresistance is measured as a function of the electron density (Ns) and it is shown that the amplitude of the electron cyclotron photoresistance decreases with decreasing density, and the electron cyclotron photoresistance is not detected at Ns < 5 × 109 cm−2. Thus, the two-dimensional semimetal under study does not exhibit the Ns-independent electron cyclotron photoresistance, which was earlier observed in the two-dimensional semimetal arising near the (100) surface. This is assumingly due to a significantly lower (by more than an order of magnitude) electron mobility in the system under study.

UR - http://www.scopus.com/inward/record.url?scp=85107741469&partnerID=8YFLogxK

U2 - 10.1134/S0021364021070110

DO - 10.1134/S0021364021070110

M3 - Article

AN - SCOPUS:85107741469

VL - 113

SP - 466

EP - 470

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 7

ER -