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Transport through the network of topological channels in HgTe based quantum well

Research output: Contribution to journal › Article › peer-review

Semiconductor Physics Section

DOI

https://doi.org/10.1088/2053-1583/ac351e
Final published version

G. M. Gusev
Z. D. Kvon
D. A. Kozlov
E. B. Olshanetsky
M. Entin
N. N. Mikhailov

Original language	English
Article number	015021
Number of pages	8
Journal	2D Materials
Volume	9
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/ac351e
Publication status	Published - Jan 2022

OECD FOS+WOS

2.03 MECHANICAL ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY
1.04 CHEMICAL SCIENCES
2.05 MATERIALS ENGINEERING

Research areas

topological insulator, two-dimensional systems, Dirac fermions, topological network, GAPLESS DIRAC FERMIONS, COLLOQUIUM, SYSTEM

ID: 34867944