Topological states induced by local structural modification of the polar BiTeI(0001) surface

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Topological states induced by local structural modification of the polar BiTeI(0001) surface. / Fiedler, Sebastian; Eremeev, Sergey V.; Golyashov, Vladimir A. et al.

In: New Journal of Physics, Vol. 20, No. 6, 063035, 20.06.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Fiedler, S, Eremeev, SV, Golyashov, VA, Kaveev, AK, Tereshchenko, OE, Kokh, KA, Chulkov, EV, Bentmann, H & Reinert, F 2018, 'Topological states induced by local structural modification of the polar BiTeI(0001) surface', New Journal of Physics, vol. 20, no. 6, 063035. https://doi.org/10.1088/1367-2630/aac75e

APA

Fiedler, S., Eremeev, S. V., Golyashov, V. A., Kaveev, A. K., Tereshchenko, O. E., Kokh, K. A., Chulkov, E. V., Bentmann, H., & Reinert, F. (2018). Topological states induced by local structural modification of the polar BiTeI(0001) surface. New Journal of Physics, 20(6), [063035]. https://doi.org/10.1088/1367-2630/aac75e

Vancouver

Fiedler S, Eremeev SV, Golyashov VA, Kaveev AK, Tereshchenko OE, Kokh KA et al. Topological states induced by local structural modification of the polar BiTeI(0001) surface. New Journal of Physics. 2018 Jun 20;20(6):063035. doi: 10.1088/1367-2630/aac75e

Author

Fiedler, Sebastian ; Eremeev, Sergey V. ; Golyashov, Vladimir A. et al. / Topological states induced by local structural modification of the polar BiTeI(0001) surface. In: New Journal of Physics. 2018 ; Vol. 20, No. 6.

BibTeX

@article{dcd0cbc3691845f5b9d177fc7455e71d,

title = "Topological states induced by local structural modification of the polar BiTeI(0001) surface",

abstract = "The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.",

keywords = "Rashba effect, spin-orbit interaction at surfaces, topological insulator, SPINTRONICS, SEMICONDUCTORS, PLANE, DIFFRACTION, RASHBA, INVERSION",

author = "Sebastian Fiedler and Eremeev, {Sergey V.} and Golyashov, {Vladimir A.} and Kaveev, {Andrey K.} and Tereshchenko, {Oleg E.} and Kokh, {Konstantin A.} and Chulkov, {Evgueni V.} and Hendrik Bentmann and Friedrich Reinert",

note = "Publisher Copyright: {\textcopyright} 2018 The Author(s). Published by IOP Publishing Ltd on behalf of Deutsche Physikalische Gesellschaft.",

year = "2018",

month = jun,

day = "20",

doi = "10.1088/1367-2630/aac75e",

language = "English",

volume = "20",

journal = "New Journal of Physics",

issn = "1367-2630",

publisher = "IOP Publishing Ltd.",

number = "6",

}

RIS

TY - JOUR

T1 - Topological states induced by local structural modification of the polar BiTeI(0001) surface

AU - Fiedler, Sebastian

AU - Eremeev, Sergey V.

AU - Golyashov, Vladimir A.

AU - Kaveev, Andrey K.

AU - Tereshchenko, Oleg E.

AU - Kokh, Konstantin A.

AU - Chulkov, Evgueni V.

AU - Bentmann, Hendrik

AU - Reinert, Friedrich

PY - 2018/6/20

Y1 - 2018/6/20

N2 - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

AB - The layered polar semiconductor BiTeI exhibits large Rashba-type spin-orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stacking sequences.

KW - Rashba effect

KW - spin-orbit interaction at surfaces

KW - topological insulator

KW - SPINTRONICS

KW - SEMICONDUCTORS

KW - PLANE

KW - DIFFRACTION

KW - RASHBA

KW - INVERSION

UR - http://www.scopus.com/inward/record.url?scp=85049384379&partnerID=8YFLogxK

U2 - 10.1088/1367-2630/aac75e

DO - 10.1088/1367-2630/aac75e

M3 - Article

AN - SCOPUS:85049384379

VL - 20

JO - New Journal of Physics

JF - New Journal of Physics

SN - 1367-2630

IS - 6

M1 - 063035

ER -

ID: 14318549