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Thermodynamic and kinetic roughening : Monte Carlo simulation and experiment on GaAs. / Kazantsev, D. M.; Akhundov, I. O.; Kozhukhov, A. S. et al.

In: Journal of Physics: Conference Series, Vol. 816, No. 1, 012008, 11.04.2017.

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Kazantsev DM, Akhundov IO, Kozhukhov AS, Alperovich VL. Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs. Journal of Physics: Conference Series. 2017 Apr 11;816(1):012008. doi: 10.1088/1742-6596/816/1/012008

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Kazantsev, D. M. ; Akhundov, I. O. ; Kozhukhov, A. S. et al. / Thermodynamic and kinetic roughening : Monte Carlo simulation and experiment on GaAs. In: Journal of Physics: Conference Series. 2017 ; Vol. 816, No. 1.

BibTeX

@article{06de3213f0d949aca56964fa4e134ad4,
title = "Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs",
abstract = "GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing is changed to roughening. In the present paper, possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that the thermodynamic roughening transition, which consists in spontaneous generation of atomic steps due to decrease in the step line tension down to zero, cannot explain the experiment because it should occur at temperatures T ∼ 1800 - 2000°C, i.e. much higher than in the experiment. Kinetic instabilities caused by deviations from equilibrium towards growth or sublimation are shown to cause GaAs roughening at elevated temperatures. The microscopic mechanisms of kinetic-driven roughening are discussed.",
keywords = "EQUILIBRIUM CONDITIONS, GAAS(001) SURFACE",
author = "Kazantsev, {D. M.} and Akhundov, {I. O.} and Kozhukhov, {A. S.} and Alperovich, {V. L.}",
year = "2017",
month = apr,
day = "11",
doi = "10.1088/1742-6596/816/1/012008",
language = "English",
volume = "816",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Thermodynamic and kinetic roughening

T2 - Monte Carlo simulation and experiment on GaAs

AU - Kazantsev, D. M.

AU - Akhundov, I. O.

AU - Kozhukhov, A. S.

AU - Alperovich, V. L.

PY - 2017/4/11

Y1 - 2017/4/11

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing is changed to roughening. In the present paper, possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that the thermodynamic roughening transition, which consists in spontaneous generation of atomic steps due to decrease in the step line tension down to zero, cannot explain the experiment because it should occur at temperatures T ∼ 1800 - 2000°C, i.e. much higher than in the experiment. Kinetic instabilities caused by deviations from equilibrium towards growth or sublimation are shown to cause GaAs roughening at elevated temperatures. The microscopic mechanisms of kinetic-driven roughening are discussed.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing is changed to roughening. In the present paper, possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that the thermodynamic roughening transition, which consists in spontaneous generation of atomic steps due to decrease in the step line tension down to zero, cannot explain the experiment because it should occur at temperatures T ∼ 1800 - 2000°C, i.e. much higher than in the experiment. Kinetic instabilities caused by deviations from equilibrium towards growth or sublimation are shown to cause GaAs roughening at elevated temperatures. The microscopic mechanisms of kinetic-driven roughening are discussed.

KW - EQUILIBRIUM CONDITIONS

KW - GAAS(001) SURFACE

UR - http://www.scopus.com/inward/record.url?scp=85018417831&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/816/1/012008

DO - 10.1088/1742-6596/816/1/012008

M3 - Conference article

AN - SCOPUS:85018417831

VL - 816

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012008

ER -

ID: 10041275