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The optical properties of the nonlinear crystal BaGa4Se7. / Yelisseyev, A. P.; Lobanov, S. I.; Krinitsin, P. G. et al.

In: Optical Materials, Vol. 99, 109564, 01.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Yelisseyev, AP, Lobanov, SI, Krinitsin, PG & Isaenko, LI 2020, 'The optical properties of the nonlinear crystal BaGa4Se7', Optical Materials, vol. 99, 109564. https://doi.org/10.1016/j.optmat.2019.109564

APA

Yelisseyev, A. P., Lobanov, S. I., Krinitsin, P. G., & Isaenko, L. I. (2020). The optical properties of the nonlinear crystal BaGa4Se7. Optical Materials, 99, [109564]. https://doi.org/10.1016/j.optmat.2019.109564

Vancouver

Yelisseyev AP, Lobanov SI, Krinitsin PG, Isaenko LI. The optical properties of the nonlinear crystal BaGa4Se7. Optical Materials. 2020 Jan;99:109564. doi: 10.1016/j.optmat.2019.109564

Author

Yelisseyev, A. P. ; Lobanov, S. I. ; Krinitsin, P. G. et al. / The optical properties of the nonlinear crystal BaGa4Se7. In: Optical Materials. 2020 ; Vol. 99.

BibTeX

@article{d6302287d9f946369c1ad17fba592aea,
title = "The optical properties of the nonlinear crystal BaGa4Se7",
abstract = "Large crystals BaGa4Se7 (BGSe), promising as a nonlinear optical converters in the mid-IR, were grown and investigated using methods of optical spectroscopy. The crystals are transparent in the range 0.465 ÷ 22 μm. The Tauc analysis showed that BGSe is a direct bandgap dielectric with Eg = 2.73 and 2.91 eV at 300 and 80 K, respectively, with dEg/dT = −8.07 × 10−4 eV/K. Vibrational modes are observed in the range 150–350 cm−1 in the Raman spectra: Thus, two-phonon absorption determines the transparency edge in the mid-IR. Main extended defects (the (001) microtwins and point defects (impurity centers such as Ga–O and different native centers) are revealed. BGSe crystals are photosensitive in the range of 1.5–4.0 eV. Luminescence in BGSe is quenched by two orders of intensity as temperature increases from 77 to 300 K. The possibility of controlling the luminescence parameters by post-growth annealing in a suitable atmosphere demonstrated. Pyroelectric luminescence in the 100–440 K range confirms the noncentrosymmetric structure of this crystal.",
keywords = "Absorption, BaGaSe, Defects, Growth, Luminescence, Photoconductivity, PHOTOLUMINESCENCE, GROWTH, POWER, BaGa4Se7, MU-M, HIGH-EFFICIENCY",
author = "Yelisseyev, {A. P.} and Lobanov, {S. I.} and Krinitsin, {P. G.} and Isaenko, {L. I.}",
year = "2020",
month = jan,
doi = "10.1016/j.optmat.2019.109564",
language = "English",
volume = "99",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - The optical properties of the nonlinear crystal BaGa4Se7

AU - Yelisseyev, A. P.

AU - Lobanov, S. I.

AU - Krinitsin, P. G.

AU - Isaenko, L. I.

PY - 2020/1

Y1 - 2020/1

N2 - Large crystals BaGa4Se7 (BGSe), promising as a nonlinear optical converters in the mid-IR, were grown and investigated using methods of optical spectroscopy. The crystals are transparent in the range 0.465 ÷ 22 μm. The Tauc analysis showed that BGSe is a direct bandgap dielectric with Eg = 2.73 and 2.91 eV at 300 and 80 K, respectively, with dEg/dT = −8.07 × 10−4 eV/K. Vibrational modes are observed in the range 150–350 cm−1 in the Raman spectra: Thus, two-phonon absorption determines the transparency edge in the mid-IR. Main extended defects (the (001) microtwins and point defects (impurity centers such as Ga–O and different native centers) are revealed. BGSe crystals are photosensitive in the range of 1.5–4.0 eV. Luminescence in BGSe is quenched by two orders of intensity as temperature increases from 77 to 300 K. The possibility of controlling the luminescence parameters by post-growth annealing in a suitable atmosphere demonstrated. Pyroelectric luminescence in the 100–440 K range confirms the noncentrosymmetric structure of this crystal.

AB - Large crystals BaGa4Se7 (BGSe), promising as a nonlinear optical converters in the mid-IR, were grown and investigated using methods of optical spectroscopy. The crystals are transparent in the range 0.465 ÷ 22 μm. The Tauc analysis showed that BGSe is a direct bandgap dielectric with Eg = 2.73 and 2.91 eV at 300 and 80 K, respectively, with dEg/dT = −8.07 × 10−4 eV/K. Vibrational modes are observed in the range 150–350 cm−1 in the Raman spectra: Thus, two-phonon absorption determines the transparency edge in the mid-IR. Main extended defects (the (001) microtwins and point defects (impurity centers such as Ga–O and different native centers) are revealed. BGSe crystals are photosensitive in the range of 1.5–4.0 eV. Luminescence in BGSe is quenched by two orders of intensity as temperature increases from 77 to 300 K. The possibility of controlling the luminescence parameters by post-growth annealing in a suitable atmosphere demonstrated. Pyroelectric luminescence in the 100–440 K range confirms the noncentrosymmetric structure of this crystal.

KW - Absorption

KW - BaGaSe

KW - Defects

KW - Growth

KW - Luminescence

KW - Photoconductivity

KW - PHOTOLUMINESCENCE

KW - GROWTH

KW - POWER

KW - BaGa4Se7

KW - MU-M

KW - HIGH-EFFICIENCY

UR - http://www.scopus.com/inward/record.url?scp=85079019085&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/4ebaeceb-3a95-35e6-b2dc-d5e2d75388ce/

U2 - 10.1016/j.optmat.2019.109564

DO - 10.1016/j.optmat.2019.109564

M3 - Article

AN - SCOPUS:85079019085

VL - 99

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 109564

ER -

ID: 23429315