Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
The effect of surface on conductivity of PbSnTe:IN/BaF2 topological crystalline insulator in space charge limited current regimes. / Nikolaevich, Akimov Alexey; Vladimirovich, Fedosenko Evgeny; Eduardovich, Klimov Aleksandr et al.
Physics and Technology of Nanostructured Materials IV (Supplement Book). ed. / Nikolay G. Galkin. Trans Tech Publications Ltd, 2019. p. 3-9 (Key Engineering Materials; Vol. 806 KEM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - The effect of surface on conductivity of PbSnTe:IN/BaF2 topological crystalline insulator in space charge limited current regimes
AU - Nikolaevich, Akimov Alexey
AU - Vladimirovich, Fedosenko Evgeny
AU - Eduardovich, Klimov Aleksandr
AU - Vyacheslavovich, Ishchenko Denis
AU - Sergeevich, Paschin Nikolay
AU - Evgenievich, Tereshchenko Oleg
AU - Nikolaevna, Sherstyakova Valentina
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The effect of surface chemical treatment on current-voltage (IV) characteristics of high-resistance MBE-grown PbSnTe:In films in space charge limited current (SCLC) regimes has been studied. At T=4.2 K depending on surface chemical treatment the current in films in SCLC regimes under no illumination could rise up to 104 times and even more. The surface chemical treatment also affected both the value and behavior of the photocurrent. The qualitative model for the observed phenomena has been discussed.
AB - The effect of surface chemical treatment on current-voltage (IV) characteristics of high-resistance MBE-grown PbSnTe:In films in space charge limited current (SCLC) regimes has been studied. At T=4.2 K depending on surface chemical treatment the current in films in SCLC regimes under no illumination could rise up to 104 times and even more. The surface chemical treatment also affected both the value and behavior of the photocurrent. The qualitative model for the observed phenomena has been discussed.
KW - Lead-tin-telluride
KW - Narrow bandgap
KW - Topological crystalline insulator
UR - http://www.scopus.com/inward/record.url?scp=85071039321&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.806.3
DO - 10.4028/www.scientific.net/KEM.806.3
M3 - Conference contribution
AN - SCOPUS:85071039321
SN - 9783035715682
T3 - Key Engineering Materials
SP - 3
EP - 9
BT - Physics and Technology of Nanostructured Materials IV (Supplement Book)
A2 - Galkin, Nikolay G.
PB - Trans Tech Publications Ltd
T2 - 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018
Y2 - 23 September 2018 through 28 September 2018
ER -
ID: 21348765