Research output: Contribution to journal › Article › peer-review
The dislocation structure of diamond crystals grown on seeds in the Mg-C system. / Khokhryakov, Alexander F.; Nechaev, Denis V.; Palyanov, Yuri N. et al.
In: Diamond and Related Materials, Vol. 70, 01.11.2016, p. 1-6.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - The dislocation structure of diamond crystals grown on seeds in the Mg-C system
AU - Khokhryakov, Alexander F.
AU - Nechaev, Denis V.
AU - Palyanov, Yuri N.
AU - Kuper, Konstantin E.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - The dislocation structure of diamond crystals grown in the Mg-C system at a pressure of 7 GPa and temperatures of 1800–1900 °C is studied by X-ray topography and selective etching. According to the selective etching data, diamond crystals have two types of dislocations whose outputs on the {100} faces of crystal are associated with two types of etch pits. It has been demonstrated that the etch pits with the side wall inclination angle of about 7° are formed at the outcrop points of full edge dislocations, while the etch pits with the inclination angle of about 4° are associated with 45° mixed dislocations. It has been found that the dislocation structure of diamonds grown at 1900 °C is completely determined by the seed crystals structure and the dislocation density is 105 cm− 2. The dislocation density in the diamond crystals grown at 1800 °C increases by two or three orders of magnitude due to nucleation of dislocations at the seed-overgrown layer interface and in the overgrown layer. The high dislocation density leads to the mosaic structure of crystals and misorientation of single blocks, up to 1°. Local ring clusters of edge dislocations were found to be the dominant source of growth layers on the {100} faces of diamond.
AB - The dislocation structure of diamond crystals grown in the Mg-C system at a pressure of 7 GPa and temperatures of 1800–1900 °C is studied by X-ray topography and selective etching. According to the selective etching data, diamond crystals have two types of dislocations whose outputs on the {100} faces of crystal are associated with two types of etch pits. It has been demonstrated that the etch pits with the side wall inclination angle of about 7° are formed at the outcrop points of full edge dislocations, while the etch pits with the inclination angle of about 4° are associated with 45° mixed dislocations. It has been found that the dislocation structure of diamonds grown at 1900 °C is completely determined by the seed crystals structure and the dislocation density is 105 cm− 2. The dislocation density in the diamond crystals grown at 1800 °C increases by two or three orders of magnitude due to nucleation of dislocations at the seed-overgrown layer interface and in the overgrown layer. The high dislocation density leads to the mosaic structure of crystals and misorientation of single blocks, up to 1°. Local ring clusters of edge dislocations were found to be the dominant source of growth layers on the {100} faces of diamond.
KW - Dislocations
KW - Etching
KW - High pressure and high temperature
KW - Synthetic diamond
KW - X-ray topography
UR - http://www.scopus.com/inward/record.url?scp=84987875964&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2016.09.012
DO - 10.1016/j.diamond.2016.09.012
M3 - Article
AN - SCOPUS:84987875964
VL - 70
SP - 1
EP - 6
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -
ID: 25724550