Standard

The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films. / Kaveev, A. K.; Bondarenko, D. N.; Tereshchenko, O. E.

In: Journal of Physics: Conference Series, Vol. 2103, No. 1, 012086, 14.12.2021.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Kaveev, AK, Bondarenko, DN & Tereshchenko, OE 2021, 'The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films', Journal of Physics: Conference Series, vol. 2103, no. 1, 012086. https://doi.org/10.1088/1742-6596/2103/1/012086

APA

Kaveev, A. K., Bondarenko, D. N., & Tereshchenko, O. E. (2021). The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films. Journal of Physics: Conference Series, 2103(1), [012086]. https://doi.org/10.1088/1742-6596/2103/1/012086

Vancouver

Kaveev AK, Bondarenko DN, Tereshchenko OE. The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films. Journal of Physics: Conference Series. 2021 Dec 14;2103(1):012086. doi: 10.1088/1742-6596/2103/1/012086

Author

Kaveev, A. K. ; Bondarenko, D. N. ; Tereshchenko, O. E. / The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films. In: Journal of Physics: Conference Series. 2021 ; Vol. 2103, No. 1.

BibTeX

@article{8cd9b2887d764772a578828bd04a19d7,
title = "The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films",
abstract = "The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.",
author = "Kaveev, {A. K.} and Bondarenko, {D. N.} and Tereshchenko, {O. E.}",
note = "Funding Information: This work was supported by the RFBR grant No. 21-52-12024. XRD characterization was performed using equipment owned by the Joint Research Center {"}Material science and characterization in advanced technology{"} (Ioffe Institute, St.-Petersburg, Russia). Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; International Conference PhysicA.SPb/2021 ; Conference date: 18-10-2021 Through 22-10-2021",
year = "2021",
month = dec,
day = "14",
doi = "10.1088/1742-6596/2103/1/012086",
language = "English",
volume = "2103",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

AU - Kaveev, A. K.

AU - Bondarenko, D. N.

AU - Tereshchenko, O. E.

N1 - Funding Information: This work was supported by the RFBR grant No. 21-52-12024. XRD characterization was performed using equipment owned by the Joint Research Center "Material science and characterization in advanced technology" (Ioffe Institute, St.-Petersburg, Russia). Publisher Copyright: © 2021 Institute of Physics Publishing. All rights reserved.

PY - 2021/12/14

Y1 - 2021/12/14

N2 - The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

AB - The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

UR - http://www.scopus.com/inward/record.url?scp=85123492124&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2103/1/012086

DO - 10.1088/1742-6596/2103/1/012086

M3 - Conference article

AN - SCOPUS:85123492124

VL - 2103

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012086

T2 - International Conference PhysicA.SPb/2021

Y2 - 18 October 2021 through 22 October 2021

ER -

ID: 35378153