Research output: Contribution to journal › Article › peer-review
Terahertz Switching Focuser Based on Thin Film Vanadium Dioxide Zone Plate. / Solyankin, Petr M.; Esaulkov, Mikhail N.; Chernykh, Igor A. et al.
In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 39, No. 12, 01.12.2018, p. 1203-1210.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Terahertz Switching Focuser Based on Thin Film Vanadium Dioxide Zone Plate
AU - Solyankin, Petr M.
AU - Esaulkov, Mikhail N.
AU - Chernykh, Igor A.
AU - Kulikov, Ivan V.
AU - Zanaveskin, Maxim L.
AU - Kaul, Andrey R.
AU - Makarevich, Artem M.
AU - Sharovarov, Dmitrii I.
AU - Kameshkov, Oleg E.
AU - Knyazev, Boris A.
AU - Shkurinov, Alexander P.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - In this paper, we propose a switchable focuser device based on a Fresnel zone plate (FZP) structure for terahertz (THz) applications. Each FZP contains seven rings, etched in thin VO2 film with the designed focal lengths of 50 and 100 mm for 3.7-THz frequency. Temperature-induced VO2 phase transition leads to the change in dielectric susceptibility of the material, which allows one to switch on and off the focusing properties of the device. The devices were tested with radiation of 3.1 and 3.7 THz emitted by quantum cascade lasers. Experimental results were compared with numerical simulations. In this article, we compare the FZP based on VO2 films with different properties and show that a thicker VO2 film reveals higher focusing efficiency, while a thinner one reveals a higher modulation ratio for the peak intensity at the focal point of FZP. We demonstrate experimentally the near-diffraction-limited size of the beam in the focal point of the device. Switching between two phase states of the VO2 films results in up to the 38-fold change of intensity in the focal point.
AB - In this paper, we propose a switchable focuser device based on a Fresnel zone plate (FZP) structure for terahertz (THz) applications. Each FZP contains seven rings, etched in thin VO2 film with the designed focal lengths of 50 and 100 mm for 3.7-THz frequency. Temperature-induced VO2 phase transition leads to the change in dielectric susceptibility of the material, which allows one to switch on and off the focusing properties of the device. The devices were tested with radiation of 3.1 and 3.7 THz emitted by quantum cascade lasers. Experimental results were compared with numerical simulations. In this article, we compare the FZP based on VO2 films with different properties and show that a thicker VO2 film reveals higher focusing efficiency, while a thinner one reveals a higher modulation ratio for the peak intensity at the focal point of FZP. We demonstrate experimentally the near-diffraction-limited size of the beam in the focal point of the device. Switching between two phase states of the VO2 films results in up to the 38-fold change of intensity in the focal point.
KW - Fresnel zone plates
KW - Phase transition
KW - Terahertz radiation
KW - Vanadium dioxide
KW - TRANSITION
KW - LENS
UR - http://www.scopus.com/inward/record.url?scp=85054543884&partnerID=8YFLogxK
U2 - 10.1007/s10762-018-0540-0
DO - 10.1007/s10762-018-0540-0
M3 - Article
AN - SCOPUS:85054543884
VL - 39
SP - 1203
EP - 1210
JO - Journal of Infrared, Millimeter, and Terahertz Waves
JF - Journal of Infrared, Millimeter, and Terahertz Waves
SN - 1866-6892
IS - 12
ER -
ID: 17038822