Standard

Temperature-driven single-valley Dirac fermions in HgTe quantum wells. / Marcinkiewicz, M.; Ruffenach, S.; Krishtopenko, S. S. et al.

In: Physical Review B, Vol. 96, No. 3, 035405, 05.07.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Marcinkiewicz, M, Ruffenach, S, Krishtopenko, SS, Kadykov, AM, Consejo, C, But, DB, Desrat, W, Knap, W, Torres, J, Ikonnikov, AV, Spirin, KE, Morozov, SV, Gavrilenko, VI, Mikhailov, NN, Dvoretskii, SA & Teppe, F 2017, 'Temperature-driven single-valley Dirac fermions in HgTe quantum wells', Physical Review B, vol. 96, no. 3, 035405. https://doi.org/10.1103/PhysRevB.96.035405

APA

Marcinkiewicz, M., Ruffenach, S., Krishtopenko, S. S., Kadykov, A. M., Consejo, C., But, D. B., Desrat, W., Knap, W., Torres, J., Ikonnikov, A. V., Spirin, K. E., Morozov, S. V., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., & Teppe, F. (2017). Temperature-driven single-valley Dirac fermions in HgTe quantum wells. Physical Review B, 96(3), [035405]. https://doi.org/10.1103/PhysRevB.96.035405

Vancouver

Marcinkiewicz M, Ruffenach S, Krishtopenko SS, Kadykov AM, Consejo C, But DB et al. Temperature-driven single-valley Dirac fermions in HgTe quantum wells. Physical Review B. 2017 Jul 5;96(3):035405. doi: 10.1103/PhysRevB.96.035405

Author

Marcinkiewicz, M. ; Ruffenach, S. ; Krishtopenko, S. S. et al. / Temperature-driven single-valley Dirac fermions in HgTe quantum wells. In: Physical Review B. 2017 ; Vol. 96, No. 3.

BibTeX

@article{36e61982b8444c02985de10065a18578,
title = "Temperature-driven single-valley Dirac fermions in HgTe quantum wells",
abstract = "We report on the temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dc. Our results, obtained in magnetic fields up to 16 T and s temperature range from 2 to 150 K, clearly indicate a change in the band-gap energy with temperature. A quantum well wider than dc evidences a temperature-driven transition from topological insulator to semiconductor phases. At a critical temperature of 90 K, the merging of inter- and intraband transitions in weak magnetic fields clearly specifies the formation of a gapless state, revealing the appearance of single-valley massless Dirac fermions with a velocity of 5.6×105ms-1. For both quantum wells, the energies extracted from the experimental data are in good agreement with calculations on the basis of the eight-band Kane Hamiltonian with temperature-dependent parameters.",
keywords = "MASSLESS KANE FERMIONS, INTERFACE STATES, SEMIMETAL, GRAPHENE, PHASE",
author = "M. Marcinkiewicz and S. Ruffenach and Krishtopenko, {S. S.} and Kadykov, {A. M.} and C. Consejo and But, {D. B.} and W. Desrat and W. Knap and J. Torres and Ikonnikov, {A. V.} and Spirin, {K. E.} and Morozov, {S. V.} and Gavrilenko, {V. I.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and F. Teppe",
year = "2017",
month = jul,
day = "5",
doi = "10.1103/PhysRevB.96.035405",
language = "English",
volume = "96",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Temperature-driven single-valley Dirac fermions in HgTe quantum wells

AU - Marcinkiewicz, M.

AU - Ruffenach, S.

AU - Krishtopenko, S. S.

AU - Kadykov, A. M.

AU - Consejo, C.

AU - But, D. B.

AU - Desrat, W.

AU - Knap, W.

AU - Torres, J.

AU - Ikonnikov, A. V.

AU - Spirin, K. E.

AU - Morozov, S. V.

AU - Gavrilenko, V. I.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Teppe, F.

PY - 2017/7/5

Y1 - 2017/7/5

N2 - We report on the temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dc. Our results, obtained in magnetic fields up to 16 T and s temperature range from 2 to 150 K, clearly indicate a change in the band-gap energy with temperature. A quantum well wider than dc evidences a temperature-driven transition from topological insulator to semiconductor phases. At a critical temperature of 90 K, the merging of inter- and intraband transitions in weak magnetic fields clearly specifies the formation of a gapless state, revealing the appearance of single-valley massless Dirac fermions with a velocity of 5.6×105ms-1. For both quantum wells, the energies extracted from the experimental data are in good agreement with calculations on the basis of the eight-band Kane Hamiltonian with temperature-dependent parameters.

AB - We report on the temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dc. Our results, obtained in magnetic fields up to 16 T and s temperature range from 2 to 150 K, clearly indicate a change in the band-gap energy with temperature. A quantum well wider than dc evidences a temperature-driven transition from topological insulator to semiconductor phases. At a critical temperature of 90 K, the merging of inter- and intraband transitions in weak magnetic fields clearly specifies the formation of a gapless state, revealing the appearance of single-valley massless Dirac fermions with a velocity of 5.6×105ms-1. For both quantum wells, the energies extracted from the experimental data are in good agreement with calculations on the basis of the eight-band Kane Hamiltonian with temperature-dependent parameters.

KW - MASSLESS KANE FERMIONS

KW - INTERFACE STATES

KW - SEMIMETAL

KW - GRAPHENE

KW - PHASE

UR - http://www.scopus.com/inward/record.url?scp=85026401271&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.96.035405

DO - 10.1103/PhysRevB.96.035405

M3 - Article

AN - SCOPUS:85026401271

VL - 96

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 3

M1 - 035405

ER -

ID: 9977031