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Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection. / Yakimov, A. I.; Bloshkin, A. A.; Dvurechenskii, A. V.

In: Photonics and Nanostructures - Fundamentals and Applications, Vol. 40, 100790, 07.2020.

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Yakimov AI, Bloshkin AA, Dvurechenskii AV. Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection. Photonics and Nanostructures - Fundamentals and Applications. 2020 Jul;40:100790. doi: 10.1016/j.photonics.2020.100790

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@article{8f4ce0b5482041d99aca35fb666f218e,
title = "Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection",
abstract = "We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared region. Gold films perforated with periodic two-dimensional subwavelength hole arrays were used as the plasmonic couplers. The array periodicity was adjusted to excite the surface plasmon modes at the telecom wavelengths (between 1.3 and 1.55 μm). The field intensity enhancement factor and its spectral position, as a function of hole diameter, demonstrate the maximum at which the Bloch plasmon polariton waves propagating along the Au–Si interface change by a localized surface plasmon mode. The maximum peak wavelength and field intensity enhancement are reached at d/a = 0.5, where d is the hole diameter and a is the array periodicity. An over 14 times field intensity enhancement was obtained at λ = 1.54 μm for d = 200 nm and a = 400 nm. We found that the localized surface plasmon mode is confined mainly under the Au regions along the diagonals of the square lattice of holes. The lateral field distribution for propagating modes has either a hexagonal or square shape, reflecting in-pane symmetry of the grating. For structures with largest holes, the anticrossing of localized mode with the propagating one was observed implying coupling between the modes and formation of a mixed near-field state. The information acquired from the study is valuable for feasible device applications.",
keywords = "Near-field enhancement, Near-infrared photodetectors, Subwavelength optics, Surface plasmons, PHOTONICS, HOLES, DOTS, LAYERS, GE/SI, SURFACE-PLASMONS, TRANSMISSION, GAPS, RESONANCES",
author = "Yakimov, {A. I.} and Bloshkin, {A. A.} and Dvurechenskii, {A. V.}",
year = "2020",
month = jul,
doi = "10.1016/j.photonics.2020.100790",
language = "English",
volume = "40",
journal = "Photonics and Nanostructures - Fundamentals and Applications",
issn = "1569-4410",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection

AU - Yakimov, A. I.

AU - Bloshkin, A. A.

AU - Dvurechenskii, A. V.

PY - 2020/7

Y1 - 2020/7

N2 - We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared region. Gold films perforated with periodic two-dimensional subwavelength hole arrays were used as the plasmonic couplers. The array periodicity was adjusted to excite the surface plasmon modes at the telecom wavelengths (between 1.3 and 1.55 μm). The field intensity enhancement factor and its spectral position, as a function of hole diameter, demonstrate the maximum at which the Bloch plasmon polariton waves propagating along the Au–Si interface change by a localized surface plasmon mode. The maximum peak wavelength and field intensity enhancement are reached at d/a = 0.5, where d is the hole diameter and a is the array periodicity. An over 14 times field intensity enhancement was obtained at λ = 1.54 μm for d = 200 nm and a = 400 nm. We found that the localized surface plasmon mode is confined mainly under the Au regions along the diagonals of the square lattice of holes. The lateral field distribution for propagating modes has either a hexagonal or square shape, reflecting in-pane symmetry of the grating. For structures with largest holes, the anticrossing of localized mode with the propagating one was observed implying coupling between the modes and formation of a mixed near-field state. The information acquired from the study is valuable for feasible device applications.

AB - We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared region. Gold films perforated with periodic two-dimensional subwavelength hole arrays were used as the plasmonic couplers. The array periodicity was adjusted to excite the surface plasmon modes at the telecom wavelengths (between 1.3 and 1.55 μm). The field intensity enhancement factor and its spectral position, as a function of hole diameter, demonstrate the maximum at which the Bloch plasmon polariton waves propagating along the Au–Si interface change by a localized surface plasmon mode. The maximum peak wavelength and field intensity enhancement are reached at d/a = 0.5, where d is the hole diameter and a is the array periodicity. An over 14 times field intensity enhancement was obtained at λ = 1.54 μm for d = 200 nm and a = 400 nm. We found that the localized surface plasmon mode is confined mainly under the Au regions along the diagonals of the square lattice of holes. The lateral field distribution for propagating modes has either a hexagonal or square shape, reflecting in-pane symmetry of the grating. For structures with largest holes, the anticrossing of localized mode with the propagating one was observed implying coupling between the modes and formation of a mixed near-field state. The information acquired from the study is valuable for feasible device applications.

KW - Near-field enhancement

KW - Near-infrared photodetectors

KW - Subwavelength optics

KW - Surface plasmons

KW - PHOTONICS

KW - HOLES

KW - DOTS

KW - LAYERS

KW - GE/SI

KW - SURFACE-PLASMONS

KW - TRANSMISSION

KW - GAPS

KW - RESONANCES

UR - http://www.scopus.com/inward/record.url?scp=85084940159&partnerID=8YFLogxK

U2 - 10.1016/j.photonics.2020.100790

DO - 10.1016/j.photonics.2020.100790

M3 - Article

AN - SCOPUS:85084940159

VL - 40

JO - Photonics and Nanostructures - Fundamentals and Applications

JF - Photonics and Nanostructures - Fundamentals and Applications

SN - 1569-4410

M1 - 100790

ER -

ID: 24395133