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Tailoring multilayer quantum wells for spin devices. / Ullah, S.; Gusev, G. M.; Bakarov, A. K. et al.

In: Pramana - Journal of Physics, Vol. 91, No. 3, 34, 01.09.2018.

Research output: Contribution to journalArticlepeer-review

Harvard

Ullah, S, Gusev, GM, Bakarov, AK & Hernandez, FGG 2018, 'Tailoring multilayer quantum wells for spin devices', Pramana - Journal of Physics, vol. 91, no. 3, 34. https://doi.org/10.1007/s12043-018-1611-4

APA

Ullah, S., Gusev, G. M., Bakarov, A. K., & Hernandez, F. G. G. (2018). Tailoring multilayer quantum wells for spin devices. Pramana - Journal of Physics, 91(3), [34]. https://doi.org/10.1007/s12043-018-1611-4

Vancouver

Ullah S, Gusev GM, Bakarov AK, Hernandez FGG. Tailoring multilayer quantum wells for spin devices. Pramana - Journal of Physics. 2018 Sept 1;91(3):34. doi: 10.1007/s12043-018-1611-4

Author

Ullah, S. ; Gusev, G. M. ; Bakarov, A. K. et al. / Tailoring multilayer quantum wells for spin devices. In: Pramana - Journal of Physics. 2018 ; Vol. 91, No. 3.

BibTeX

@article{20b67ba4ee884c10b26e9027df8616e5,
title = "Tailoring multilayer quantum wells for spin devices",
abstract = "Time-resolved Kerr rotation and resonant spin amplification techniques were used to study the spin dynamics in multilayer GaAs / AlGaAs quantum wells. The spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with remarkably long dephasing time T2∗>13 ns for the structure doped beyond metal–insulator transition. Dyakonov–Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factor for the spin coherence time. In the metallic regime, we found that the electron–electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov–Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, the Dyakonov–Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2∗. Our findings, namely, long-lived spin coherence persisting up to high temperature, spin polarisation decay time with and without magnetic field, the spin–orbit field, single electron relaxation time, transport scattering time and the electron–electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices.",
keywords = "75.25.−j, 76.60.Es, 78.20.Ls, 85.70.Sq, g-factor, Kerr rotation, quantum wells, Spin coherence, spin dephasing, spin–orbit field, 2-DIMENSIONAL ELECTRON-GAS, RELAXATION, AMPLIFICATION, spin-orbit field, COHERENCE",
author = "S. Ullah and Gusev, {G. M.} and Bakarov, {A. K.} and Hernandez, {F. G.G.}",
note = "Publisher Copyright: {\textcopyright} 2018, Indian Academy of Sciences.",
year = "2018",
month = sep,
day = "1",
doi = "10.1007/s12043-018-1611-4",
language = "English",
volume = "91",
journal = "Pramana - Journal of Physics",
issn = "0304-4289",
publisher = "Springer India",
number = "3",

}

RIS

TY - JOUR

T1 - Tailoring multilayer quantum wells for spin devices

AU - Ullah, S.

AU - Gusev, G. M.

AU - Bakarov, A. K.

AU - Hernandez, F. G.G.

N1 - Publisher Copyright: © 2018, Indian Academy of Sciences.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Time-resolved Kerr rotation and resonant spin amplification techniques were used to study the spin dynamics in multilayer GaAs / AlGaAs quantum wells. The spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with remarkably long dephasing time T2∗>13 ns for the structure doped beyond metal–insulator transition. Dyakonov–Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factor for the spin coherence time. In the metallic regime, we found that the electron–electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov–Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, the Dyakonov–Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2∗. Our findings, namely, long-lived spin coherence persisting up to high temperature, spin polarisation decay time with and without magnetic field, the spin–orbit field, single electron relaxation time, transport scattering time and the electron–electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices.

AB - Time-resolved Kerr rotation and resonant spin amplification techniques were used to study the spin dynamics in multilayer GaAs / AlGaAs quantum wells. The spin dynamics was regulated through the wave function engineering and quantum confinement in multilayer quantum wells. We observed the spin coherence with remarkably long dephasing time T2∗>13 ns for the structure doped beyond metal–insulator transition. Dyakonov–Perel spin relaxation mechanism, as well as the inhomogeneity of electron g-factor, was suggested as the major limiting factor for the spin coherence time. In the metallic regime, we found that the electron–electron collisions become dominant over microscopic scattering on the electron spin relaxation with the Dyakonov–Perel mechanism. Furthermore, the data analysis indicated that in our structure, due to the spin relaxation anisotropy, the Dyakonov–Perel spin relaxation mechanism is efficient for the spins oriented in-plane and suppressed along the quantum well growth direction resulting in the enhancement of T2∗. Our findings, namely, long-lived spin coherence persisting up to high temperature, spin polarisation decay time with and without magnetic field, the spin–orbit field, single electron relaxation time, transport scattering time and the electron–electron Coulomb scattering time highlight the attractiveness of n-doped multilayer systems for spin devices.

KW - 75.25.−j

KW - 76.60.Es

KW - 78.20.Ls

KW - 85.70.Sq

KW - g-factor

KW - Kerr rotation

KW - quantum wells

KW - Spin coherence

KW - spin dephasing

KW - spin–orbit field

KW - 2-DIMENSIONAL ELECTRON-GAS

KW - RELAXATION

KW - AMPLIFICATION

KW - spin-orbit field

KW - COHERENCE

UR - http://www.scopus.com/inward/record.url?scp=85050501262&partnerID=8YFLogxK

U2 - 10.1007/s12043-018-1611-4

DO - 10.1007/s12043-018-1611-4

M3 - Article

AN - SCOPUS:85050501262

VL - 91

JO - Pramana - Journal of Physics

JF - Pramana - Journal of Physics

SN - 0304-4289

IS - 3

M1 - 34

ER -

ID: 15962763