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Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet. / Taranenko, A. V.; Basalaeva, L. S.; Fedorov, V. V. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 60, No. 4, 10, 04.08.2024, p. 529-535.

Research output: Contribution to journalArticlepeer-review

Harvard

Taranenko, AV, Basalaeva, LS, Fedorov, VV, Tumashev, VS & Milekhin, AG 2024, 'Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet', Optoelectronics, Instrumentation and Data Processing, vol. 60, no. 4, 10, pp. 529-535. https://doi.org/10.3103/S8756699024700602

APA

Taranenko, A. V., Basalaeva, L. S., Fedorov, V. V., Tumashev, V. S., & Milekhin, A. G. (2024). Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet. Optoelectronics, Instrumentation and Data Processing, 60(4), 529-535. [10]. https://doi.org/10.3103/S8756699024700602

Vancouver

Taranenko AV, Basalaeva LS, Fedorov VV, Tumashev VS, Milekhin AG. Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet. Optoelectronics, Instrumentation and Data Processing. 2024 Aug 4;60(4):529-535. 10. doi: 10.3103/S8756699024700602

Author

Taranenko, A. V. ; Basalaeva, L. S. ; Fedorov, V. V. et al. / Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet. In: Optoelectronics, Instrumentation and Data Processing. 2024 ; Vol. 60, No. 4. pp. 529-535.

BibTeX

@article{82038a1c1ed04ef180830b39a3ab138e,
title = "Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet",
abstract = "In this paper, the results of studying the structural and optical properties of individual GaP(111) nanowires (NWs) and their arrays by Raman spectroscopy and atomic force microscopy (AFM) were presented. The GaP NW arrays were grown on a Si(111) substrate by self-catalytic growth via the vapor–liquid–crystal mechanism. Individual NWs were mechanically transferred onto a gold surface. In the Raman spectra of GaP nanowires, the modes of transversal (TO), longitudinal (LO), and surface (SO) optical phonons were observed. Surface-enhanced Raman scattering by optical modes was revealed in GaP nanowires near the gallium droplet due to the localized surface plasmon resonance in the droplet. The Raman maps of GaP NWs were recorded in different scattering geometries. The Raman enhancement factor for GaP NWs of 104 and 60 nm in diameter attained 11 and 6, respectively.",
keywords = "Raman scattering, atomic force microscopy, nanoparticle, nanowire, phonons",
author = "Taranenko, {A. V.} and Basalaeva, {L. S.} and Fedorov, {V. V.} and Tumashev, {V. S.} and Milekhin, {A. G.}",
note = "Structural and optical studies were supported by the Russian Scientific Foundation (grant no. 22-12-00302). Epitaxial synthesis was carried out by V.V. Fedorov under support from the Russian Federation Ministry of Science and Higher Education (state assignment grant no. FSEG-2024-0017).",
year = "2024",
month = aug,
day = "4",
doi = "10.3103/S8756699024700602",
language = "English",
volume = "60",
pages = "529--535",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - Surface-Enhanced Raman Scattering from GaP Nanowires with a Gallium Droplet

AU - Taranenko, A. V.

AU - Basalaeva, L. S.

AU - Fedorov, V. V.

AU - Tumashev, V. S.

AU - Milekhin, A. G.

N1 - Structural and optical studies were supported by the Russian Scientific Foundation (grant no. 22-12-00302). Epitaxial synthesis was carried out by V.V. Fedorov under support from the Russian Federation Ministry of Science and Higher Education (state assignment grant no. FSEG-2024-0017).

PY - 2024/8/4

Y1 - 2024/8/4

N2 - In this paper, the results of studying the structural and optical properties of individual GaP(111) nanowires (NWs) and their arrays by Raman spectroscopy and atomic force microscopy (AFM) were presented. The GaP NW arrays were grown on a Si(111) substrate by self-catalytic growth via the vapor–liquid–crystal mechanism. Individual NWs were mechanically transferred onto a gold surface. In the Raman spectra of GaP nanowires, the modes of transversal (TO), longitudinal (LO), and surface (SO) optical phonons were observed. Surface-enhanced Raman scattering by optical modes was revealed in GaP nanowires near the gallium droplet due to the localized surface plasmon resonance in the droplet. The Raman maps of GaP NWs were recorded in different scattering geometries. The Raman enhancement factor for GaP NWs of 104 and 60 nm in diameter attained 11 and 6, respectively.

AB - In this paper, the results of studying the structural and optical properties of individual GaP(111) nanowires (NWs) and their arrays by Raman spectroscopy and atomic force microscopy (AFM) were presented. The GaP NW arrays were grown on a Si(111) substrate by self-catalytic growth via the vapor–liquid–crystal mechanism. Individual NWs were mechanically transferred onto a gold surface. In the Raman spectra of GaP nanowires, the modes of transversal (TO), longitudinal (LO), and surface (SO) optical phonons were observed. Surface-enhanced Raman scattering by optical modes was revealed in GaP nanowires near the gallium droplet due to the localized surface plasmon resonance in the droplet. The Raman maps of GaP NWs were recorded in different scattering geometries. The Raman enhancement factor for GaP NWs of 104 and 60 nm in diameter attained 11 and 6, respectively.

KW - Raman scattering

KW - atomic force microscopy

KW - nanoparticle

KW - nanowire

KW - phonons

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UR - https://www.elibrary.ru/item.asp?id=79610717

UR - https://www.mendeley.com/catalogue/228833d0-eeb9-3027-9ae6-5a90a6b3dd9e/

U2 - 10.3103/S8756699024700602

DO - 10.3103/S8756699024700602

M3 - Article

VL - 60

SP - 529

EP - 535

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 4

M1 - 10

ER -

ID: 64718369