Research output: Contribution to journal › Article › peer-review
Superconductor–Insulator Transition in NbTiN Films. / Burdastyh, M. V.; Postolova, S. V.; Baturina, T. I. et al.
In: JETP Letters, Vol. 106, No. 11, 01.12.2017, p. 749-753.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Superconductor–Insulator Transition in NbTiN Films
AU - Burdastyh, M. V.
AU - Postolova, S. V.
AU - Baturina, T. I.
AU - Proslier, T.
AU - Vinokur, V. M.
AU - Mironov, A. Yu
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition Tc according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.
AB - Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition Tc according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.
UR - http://www.scopus.com/inward/record.url?scp=85042730305&partnerID=8YFLogxK
U2 - 10.1134/S0021364017230060
DO - 10.1134/S0021364017230060
M3 - Article
AN - SCOPUS:85042730305
VL - 106
SP - 749
EP - 753
JO - JETP Letters
JF - JETP Letters
SN - 0021-3640
IS - 11
ER -
ID: 10180890