Research output: Contribution to journal › Article › peer-review
Superconducting phase transitions in disordered NbTiN films. / Burdastyh, M. V.; Postolova, S. V.; Proslier, T. et al.
In: Scientific Reports, Vol. 10, No. 1, 1471, 30.01.2020.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Superconducting phase transitions in disordered NbTiN films
AU - Burdastyh, M. V.
AU - Postolova, S. V.
AU - Proslier, T.
AU - Ustavshikov, S. S.
AU - Antonov, A. V.
AU - Vinokur, V. M.
AU - Mironov, A. Yu
PY - 2020/1/30
Y1 - 2020/1/30
N2 - Suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate superconducting niobium-titanium-nitride (Nb1−xTixN) thin films grown by the atomic layer deposition (ALD) with slightly different growth process parameters. We observe a smooth crossover from the disorder-driven superconductor-normal metal transition (SMT) to the superconductor-insulator transition (SIT) via the intermediate Bose metal state detected by the low-temperature saturation of the temperature dependence of the sheet resistance. We demonstrate that the SIT via the intervening Bose metal state occurs if the sheet resistance of the film in the maximum, Rmax prior to the superconducting drop of R(T), exceeds Rq = h/4e2.
AB - Suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate superconducting niobium-titanium-nitride (Nb1−xTixN) thin films grown by the atomic layer deposition (ALD) with slightly different growth process parameters. We observe a smooth crossover from the disorder-driven superconductor-normal metal transition (SMT) to the superconductor-insulator transition (SIT) via the intermediate Bose metal state detected by the low-temperature saturation of the temperature dependence of the sheet resistance. We demonstrate that the SIT via the intervening Bose metal state occurs if the sheet resistance of the film in the maximum, Rmax prior to the superconducting drop of R(T), exceeds Rq = h/4e2.
KW - ATOMIC LAYER DEPOSITION
KW - INSULATOR TRANSITION
KW - MAGNETIC-FIELD
KW - FLUCTUATION
KW - CONDUCTIVITY
KW - RESISTANCE
KW - METAL
UR - http://www.scopus.com/inward/record.url?scp=85078709736&partnerID=8YFLogxK
U2 - 10.1038/s41598-020-58192-3
DO - 10.1038/s41598-020-58192-3
M3 - Article
C2 - 32001735
AN - SCOPUS:85078709736
VL - 10
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 1471
ER -
ID: 23329581