Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

Standard

Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM. / Petrov, A. S.; Rogilo, D. I.; Zhachuk, R. A. et al.

In: Applied Surface Science, Vol. 609, 155367, 30.01.2023.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{2ba92df45c144f6b83c8211dfe8fccc8,

title = "Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM",

abstract = "Using in situ ultrahigh vacuum reflection electron microscopy, we have studied structural transitions on the Si(1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML = 7.8∙1014 cm−2) and by Sn desorption at substrate temperatures T = 200–860 °C. We have shown that Si–Sn intermixing in the adsorption layer during Sn deposition onto the Si(1 1 1)-(7 × 7) surface at T > 650 °C leads to the shift of the monatomic steps in the step-up direction, and there is formed a mosaic (√3×√3)-Sn phase. The electromigration of Sn adatoms induced by DC resistive heating has been shown to redistribute adsorbed Sn layer and to cause local (√3×√3)-Sn ⇔ “1 × 1”-Sn structural transitions on the surface. We have estimated the lower bound of the Sn adatom positive effective charge on the Si(1 1 1) surface qeffSn ≥ 0.001∙e. During AC annealing, the rate of desorption-induced “1 × 1”-Sn domain area shrinkage has been measured as a function of substrate temperature, and the activation energy of Sn adatom desorption has been estimated to be 2.5 ± 0.1 eV.",

keywords = "Desorption, Electromigration, Silicon, Structural transitions, Surface, Tin",

author = "Petrov, {A. S.} and Rogilo, {D. I.} and Zhachuk, {R. A.} and Vergules, {A. I.} and Sheglov, {D. V.} and Latyshev, {A. V.}",

note = "Funding Information: This work was performed on the equipment of CKP “Nanostruktury” and was financially supported by Russian Science Foundation [grant number 19-72-30023 ]. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2023",

month = jan,

day = "30",

doi = "10.1016/j.apsusc.2022.155367",

language = "English",

volume = "609",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

AU - Petrov, A. S.

AU - Rogilo, D. I.

AU - Zhachuk, R. A.

AU - Vergules, A. I.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

N1 - Funding Information: This work was performed on the equipment of CKP “Nanostruktury” and was financially supported by Russian Science Foundation [grant number 19-72-30023 ]. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2023/1/30

Y1 - 2023/1/30

N2 - Using in situ ultrahigh vacuum reflection electron microscopy, we have studied structural transitions on the Si(1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML = 7.8∙1014 cm−2) and by Sn desorption at substrate temperatures T = 200–860 °C. We have shown that Si–Sn intermixing in the adsorption layer during Sn deposition onto the Si(1 1 1)-(7 × 7) surface at T > 650 °C leads to the shift of the monatomic steps in the step-up direction, and there is formed a mosaic (√3×√3)-Sn phase. The electromigration of Sn adatoms induced by DC resistive heating has been shown to redistribute adsorbed Sn layer and to cause local (√3×√3)-Sn ⇔ “1 × 1”-Sn structural transitions on the surface. We have estimated the lower bound of the Sn adatom positive effective charge on the Si(1 1 1) surface qeffSn ≥ 0.001∙e. During AC annealing, the rate of desorption-induced “1 × 1”-Sn domain area shrinkage has been measured as a function of substrate temperature, and the activation energy of Sn adatom desorption has been estimated to be 2.5 ± 0.1 eV.

AB - Using in situ ultrahigh vacuum reflection electron microscopy, we have studied structural transitions on the Si(1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML = 7.8∙1014 cm−2) and by Sn desorption at substrate temperatures T = 200–860 °C. We have shown that Si–Sn intermixing in the adsorption layer during Sn deposition onto the Si(1 1 1)-(7 × 7) surface at T > 650 °C leads to the shift of the monatomic steps in the step-up direction, and there is formed a mosaic (√3×√3)-Sn phase. The electromigration of Sn adatoms induced by DC resistive heating has been shown to redistribute adsorbed Sn layer and to cause local (√3×√3)-Sn ⇔ “1 × 1”-Sn structural transitions on the surface. We have estimated the lower bound of the Sn adatom positive effective charge on the Si(1 1 1) surface qeffSn ≥ 0.001∙e. During AC annealing, the rate of desorption-induced “1 × 1”-Sn domain area shrinkage has been measured as a function of substrate temperature, and the activation energy of Sn adatom desorption has been estimated to be 2.5 ± 0.1 eV.

KW - Desorption

KW - Electromigration

KW - Silicon

KW - Structural transitions

KW - Surface

KW - Tin

UR - http://www.scopus.com/inward/record.url?scp=85140917793&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2022.155367

DO - 10.1016/j.apsusc.2022.155367

M3 - Article

AN - SCOPUS:85140917793

VL - 609

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 155367

ER -

ID: 38844059