TY - GEN

T1 - Structural characteristics of diamond-like carbon films synthesized by different methods

AU - Zolkin, Alexander

AU - Semerikova, Anna

AU - Chepkasov, Sergey

AU - Khomyakov, Maxim

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19-45 GPa. Hydrogenated carbon films were synthesized using END-Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low-(150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180-250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

AB - In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19-45 GPa. Hydrogenated carbon films were synthesized using END-Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low-(150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180-250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

KW - Diamond-like carbon

KW - End-hall source

KW - Linear ion source

KW - Pulse cathodic arc

KW - Raman spectroscopy

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=85027043182&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.743.112

DO - 10.4028/www.scientific.net/KEM.743.112

M3 - Conference contribution

AN - SCOPUS:85027043182

SN - 9783035711356

VL - 743 KEM

T3 - Key Engineering Materials

SP - 112

EP - 117

BT - High Technology

PB - Trans Tech Publications Ltd

T2 - 5th International Science and Engineering Conference on High Technology: Research and Applications, HTRA 2016

Y2 - 5 December 2016 through 7 December 2016

ER -