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Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. / Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A. et al.

Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Vol. 1874 American Institute of Physics Inc., 2017. 030007 (AIP Conference Proceedings; Vol. 1874).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Shevlyagin, AV, Goroshko, DL, Chusovitin, EA, Balagan, SA, Dotsenko, SA, Galkin, KN, Galkin, NG, Shamirzaev, TS, Gutakovskii, AK, Iinuma, M & Terai, Y 2017, Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. in Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. vol. 1874, 030007, AIP Conference Proceedings, vol. 1874, American Institute of Physics Inc., International Conference on Metamaterials and Nanophotonics, METANANO 2017, Vladivostok, Russian Federation, 18.09.2017. https://doi.org/10.1063/1.4998036

APA

Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M., & Terai, Y. (2017). Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. In Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017 (Vol. 1874). [030007] (AIP Conference Proceedings; Vol. 1874). American Institute of Physics Inc.. https://doi.org/10.1063/1.4998036

Vancouver

Shevlyagin AV, Goroshko DL, Chusovitin EA, Balagan SA, Dotsenko SA, Galkin KN et al. Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. In Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Vol. 1874. American Institute of Physics Inc. 2017. 030007. (AIP Conference Proceedings). doi: 10.1063/1.4998036

Author

Shevlyagin, A. V. ; Goroshko, D. L. ; Chusovitin, E. A. et al. / Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. Vol. 1874 American Institute of Physics Inc., 2017. (AIP Conference Proceedings).

BibTeX

@inproceedings{399d719bc91c4a999a22b0dbfc596044,
title = "Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si",
abstract = "Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ϵ-FeSi nanocrystals is formed on the surface, sometimes β and ϵ phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ϵ-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2-NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.",
keywords = "SI(001)",
author = "Shevlyagin, {A. V.} and Goroshko, {D. L.} and Chusovitin, {E. A.} and Balagan, {S. A.} and Dotsenko, {S. A.} and Galkin, {K. N.} and Galkin, {N. G.} and Shamirzaev, {T. S.} and Gutakovskii, {A. K.} and M. Iinuma and Y. Terai",
year = "2017",
month = sep,
day = "14",
doi = "10.1063/1.4998036",
language = "English",
volume = "1874",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
booktitle = "Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017",
note = "International Conference on Metamaterials and Nanophotonics, METANANO 2017 ; Conference date: 18-09-2017 Through 22-09-2017",

}

RIS

TY - GEN

T1 - Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

AU - Shevlyagin, A. V.

AU - Goroshko, D. L.

AU - Chusovitin, E. A.

AU - Balagan, S. A.

AU - Dotsenko, S. A.

AU - Galkin, K. N.

AU - Galkin, N. G.

AU - Shamirzaev, T. S.

AU - Gutakovskii, A. K.

AU - Iinuma, M.

AU - Terai, Y.

PY - 2017/9/14

Y1 - 2017/9/14

N2 - Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ϵ-FeSi nanocrystals is formed on the surface, sometimes β and ϵ phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ϵ-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2-NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.

AB - Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ϵ-FeSi nanocrystals is formed on the surface, sometimes β and ϵ phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ϵ-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2-NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.

KW - SI(001)

UR - http://www.scopus.com/inward/record.url?scp=85030632924&partnerID=8YFLogxK

U2 - 10.1063/1.4998036

DO - 10.1063/1.4998036

M3 - Conference contribution

AN - SCOPUS:85030632924

VL - 1874

T3 - AIP Conference Proceedings

BT - Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017

PB - American Institute of Physics Inc.

T2 - International Conference on Metamaterials and Nanophotonics, METANANO 2017

Y2 - 18 September 2017 through 22 September 2017

ER -

ID: 9894631