TY - JOUR

T1 - Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures

AU - Kablukova, Evgeniya

AU - Sabelfeld, Karl K.

AU - Protasov, Dmitry

AU - Zhuravlev, Konstantin

N1 - Evgeniya Kablukova and Karl K. Sabelfeld greatly acknowledge the support of the Russian Science Foundation, Grant 19-11-00019, in the part of the development of stochastic simulation algorithm, and the support of the Mathematical Center in Akademgorodok under the agreement No. 075-15-2022-281 with the Ministry of Science and Higher Education of the Russian Federation, in the part of computer implementation. Dmitry Protasiov and Konstantin Zhuravlev acknowledge support within the State Assignments from the Ministry of Science and Higher Education of the Russian Federation to the Rzhanov Institute of Semiconductor Physics (FWGW-2022-0055) in the part of experimental studies.

PY - 2023/12/1

Y1 - 2023/12/1

N2 - In this paper we develop a stochastic simulation algorithm for electron transport in a DA-pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in the heterostructure in the form of a coupled system of Poisson, Schrödinger and kinetic Boltzmann equations is given. A Monte Carlo model of electron transport in DA-pHEMT heterostructures which accounts for multivalley parabolic band structure, as well as relevant formulas for calculating electron scattering rates and scattering phase functions on polar optical, intervalley phonons and on impurities are developed. The results of a computational experiment involving the solution of the system of Poisson-Schrödinger-Boltzmann equations for the AlGaAs/GaAs/InGaAs/GaAs/AlGaAs heterostructure are presented. The distribution of electrons by energy subband in the main and satellite valleys and the field dependences of the electron drift velocity in each valley are calculated. It was discovered that there is no spatial transfer of electrons into wide-gap AlGaAs layers due to high barriers created by modulated-doped impurities. A comparative analysis of the electron drift velocities in the studied DA-pHEMT heterostructures and in the unstrained layer of the InGaAs is given.

AB - In this paper we develop a stochastic simulation algorithm for electron transport in a DA-pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in the heterostructure in the form of a coupled system of Poisson, Schrödinger and kinetic Boltzmann equations is given. A Monte Carlo model of electron transport in DA-pHEMT heterostructures which accounts for multivalley parabolic band structure, as well as relevant formulas for calculating electron scattering rates and scattering phase functions on polar optical, intervalley phonons and on impurities are developed. The results of a computational experiment involving the solution of the system of Poisson-Schrödinger-Boltzmann equations for the AlGaAs/GaAs/InGaAs/GaAs/AlGaAs heterostructure are presented. The distribution of electrons by energy subband in the main and satellite valleys and the field dependences of the electron drift velocity in each valley are calculated. It was discovered that there is no spatial transfer of electrons into wide-gap AlGaAs layers due to high barriers created by modulated-doped impurities. A comparative analysis of the electron drift velocities in the studied DA-pHEMT heterostructures and in the unstrained layer of the InGaAs is given.

KW - DA-pHEMT heterostructures

KW - Monte Carlo simulation

KW - Schrödinger equation

KW - kinetic Boltzmann equation

KW - phonons

KW - quantum well

KW - valleys

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85175869175&origin=inward&txGid=4331698ea1b900bcbe994fc1c08c3288

UR - https://www.mendeley.com/catalogue/dad1dc58-1d8c-311c-96d4-9a4548ba06ec/

U2 - 10.1515/mcma-2023-2019

DO - 10.1515/mcma-2023-2019

M3 - Article

VL - 29

SP - 307

EP - 322

JO - Monte Carlo Methods and Applications

JF - Monte Carlo Methods and Applications

SN - 0929-9629

IS - 4

ER -