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Stochastic Simulation Algorithms for Solving Transient Anisotropic Diffusion-recombination Equations and Application to Cathodoluminescence Imaging. / Sabelfeld, Karl K.; Kireeva, Anastasia E.

In: Methodology and Computing in Applied Probability, Vol. 24, 01.12.2022, p. 3029-3048.

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Sabelfeld KK, Kireeva AE. Stochastic Simulation Algorithms for Solving Transient Anisotropic Diffusion-recombination Equations and Application to Cathodoluminescence Imaging. Methodology and Computing in Applied Probability. 2022 Dec 1;24:3029-3048. doi: 10.1007/s11009-022-09968-9

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Sabelfeld, Karl K. ; Kireeva, Anastasia E. / Stochastic Simulation Algorithms for Solving Transient Anisotropic Diffusion-recombination Equations and Application to Cathodoluminescence Imaging. In: Methodology and Computing in Applied Probability. 2022 ; Vol. 24. pp. 3029-3048.

BibTeX

@article{c2874fb492a640f6a74bb7185e0a55ab,
title = "Stochastic Simulation Algorithms for Solving Transient Anisotropic Diffusion-recombination Equations and Application to Cathodoluminescence Imaging",
abstract = "A meshless Random Walk on arbitrary parallelepipeds simulation algorithm is developed and implemented for solving transient anisotropic diffusion-reaction equations. In contrast to the conventional Feynman-Kac based algorithm the suggested method does not use small time step simulations of the relevant diffusion processes. Instead, exact simulation of large random jumps over a set of appropriately constructed parallelepipeds in the domain is carried out. This decreases the cost of simulations considerably especially for domains with complicated boundary shape. Application to the problem of time-resolved cathodoluminescence intensity calculations for semiconductor materials with a set of threading dislocations is given. Important issues are the construction of an efficient sampling method from the first passage time density and the position distribution on the surface of an arbitrary parallelepiped. We combine a rejection algorithm and a probability density tabulation approach to construct optimal sampling methods from different densities including the random time a particle spends in a parallelepiped before it is absorbed inside it. We present in the last section results of computer simulation for the evaluation of the exciton flux to dislocations and a plane substrate, the cathodoluminescence intensity for threading dislocations imaging, and the concentration of the survived excitons. In addition, to validate the developed algorithms we have compared the computer simulations with the exact results, and obtained a perfect agreement.",
keywords = "Anisotropic Green{\textquoteright}s function, Cathodoluminescence imaging, Dislocations, First passage time, PACS 01.85.+f, PACS 02.70.Uu, PACS 07.05.Tp, Random walk on parallelepipeds, Survival probability",
author = "Sabelfeld, {Karl K.} and Kireeva, {Anastasia E.}",
note = "Funding Information: Support of the Russian Science Foundation under Grant 19-11-00019 is gratefully acknowledged. Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.",
year = "2022",
month = dec,
day = "1",
doi = "10.1007/s11009-022-09968-9",
language = "English",
volume = "24",
pages = "3029--3048",
journal = "Methodology and Computing in Applied Probability",
issn = "1387-5841",
publisher = "Springer Netherlands",

}

RIS

TY - JOUR

T1 - Stochastic Simulation Algorithms for Solving Transient Anisotropic Diffusion-recombination Equations and Application to Cathodoluminescence Imaging

AU - Sabelfeld, Karl K.

AU - Kireeva, Anastasia E.

N1 - Funding Information: Support of the Russian Science Foundation under Grant 19-11-00019 is gratefully acknowledged. Publisher Copyright: © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

PY - 2022/12/1

Y1 - 2022/12/1

N2 - A meshless Random Walk on arbitrary parallelepipeds simulation algorithm is developed and implemented for solving transient anisotropic diffusion-reaction equations. In contrast to the conventional Feynman-Kac based algorithm the suggested method does not use small time step simulations of the relevant diffusion processes. Instead, exact simulation of large random jumps over a set of appropriately constructed parallelepipeds in the domain is carried out. This decreases the cost of simulations considerably especially for domains with complicated boundary shape. Application to the problem of time-resolved cathodoluminescence intensity calculations for semiconductor materials with a set of threading dislocations is given. Important issues are the construction of an efficient sampling method from the first passage time density and the position distribution on the surface of an arbitrary parallelepiped. We combine a rejection algorithm and a probability density tabulation approach to construct optimal sampling methods from different densities including the random time a particle spends in a parallelepiped before it is absorbed inside it. We present in the last section results of computer simulation for the evaluation of the exciton flux to dislocations and a plane substrate, the cathodoluminescence intensity for threading dislocations imaging, and the concentration of the survived excitons. In addition, to validate the developed algorithms we have compared the computer simulations with the exact results, and obtained a perfect agreement.

AB - A meshless Random Walk on arbitrary parallelepipeds simulation algorithm is developed and implemented for solving transient anisotropic diffusion-reaction equations. In contrast to the conventional Feynman-Kac based algorithm the suggested method does not use small time step simulations of the relevant diffusion processes. Instead, exact simulation of large random jumps over a set of appropriately constructed parallelepipeds in the domain is carried out. This decreases the cost of simulations considerably especially for domains with complicated boundary shape. Application to the problem of time-resolved cathodoluminescence intensity calculations for semiconductor materials with a set of threading dislocations is given. Important issues are the construction of an efficient sampling method from the first passage time density and the position distribution on the surface of an arbitrary parallelepiped. We combine a rejection algorithm and a probability density tabulation approach to construct optimal sampling methods from different densities including the random time a particle spends in a parallelepiped before it is absorbed inside it. We present in the last section results of computer simulation for the evaluation of the exciton flux to dislocations and a plane substrate, the cathodoluminescence intensity for threading dislocations imaging, and the concentration of the survived excitons. In addition, to validate the developed algorithms we have compared the computer simulations with the exact results, and obtained a perfect agreement.

KW - Anisotropic Green’s function

KW - Cathodoluminescence imaging

KW - Dislocations

KW - First passage time

KW - PACS 01.85.+f

KW - PACS 02.70.Uu

KW - PACS 07.05.Tp

KW - Random walk on parallelepipeds

KW - Survival probability

UR - http://www.scopus.com/inward/record.url?scp=85134406950&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/edd4008a-5958-3a44-b886-ad13df63db0a/

U2 - 10.1007/s11009-022-09968-9

DO - 10.1007/s11009-022-09968-9

M3 - Article

AN - SCOPUS:85134406950

VL - 24

SP - 3029

EP - 3048

JO - Methodology and Computing in Applied Probability

JF - Methodology and Computing in Applied Probability

SN - 1387-5841

ER -

ID: 36759593