Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	341-352
Number of pages	12
Journal	Computational Materials Science
Volume	141
DOIs	https://doi.org/10.1016/j.commatsci.2017.09.046
Publication status	Published - 1 Jan 2018

Adatoms, Bundling, Coalescence, Multiple scattering, Nanowires, Self-preserving distribution, Surface diffusion, MECHANISMS, NUCLEATION

ID: 12100742