Stochastic model and simulation of GaN nanowires formation characterized by long incubation time followed by burst nucleation and growth

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	111664
Journal	Computational Materials Science
Volume	213
DOIs	https://doi.org/10.1016/j.commatsci.2022.111664
Publication status	Published - Oct 2022

Adatoms, Burst nucleation, Epitaxy, Incubation time, Monte Carlo kinetic algorithm, Nanowires, Surface diffusion

ID: 36730113