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Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. / Morozov, S. V.; Rumyantsev, V. V.; Fadeev, M. A. et al.

In: Applied Physics Letters, Vol. 111, No. 19, 192101, 06.11.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Morozov, SV, Rumyantsev, VV, Fadeev, MA, Zholudev, MS, Kudryavtsev, KE, Antonov, AV, Kadykov, AM, Dubinov, AA, Mikhailov, NN, Dvoretsky, SA & Gavrilenko, VI 2017, 'Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m', Applied Physics Letters, vol. 111, no. 19, 192101. https://doi.org/10.1063/1.4996966

APA

Morozov, S. V., Rumyantsev, V. V., Fadeev, M. A., Zholudev, M. S., Kudryavtsev, K. E., Antonov, A. V., Kadykov, A. M., Dubinov, A. A., Mikhailov, N. N., Dvoretsky, S. A., & Gavrilenko, V. I. (2017). Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. Applied Physics Letters, 111(19), [192101]. https://doi.org/10.1063/1.4996966

Vancouver

Morozov SV, Rumyantsev VV, Fadeev MA, Zholudev MS, Kudryavtsev KE, Antonov AV et al. Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. Applied Physics Letters. 2017 Nov 6;111(19):192101. doi: 10.1063/1.4996966

Author

Morozov, S. V. ; Rumyantsev, V. V. ; Fadeev, M. A. et al. / Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. In: Applied Physics Letters. 2017 ; Vol. 111, No. 19.

BibTeX

@article{20c161c4721a419197af2c3eb895bc89,
title = "Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m",
abstract = "We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.",
keywords = "MOLECULAR-BEAM EPITAXY, CASCADE LASERS, WAVE-GUIDE, M RANGE, LIFETIMES, OPERATION, GROWTH",
author = "Morozov, {S. V.} and Rumyantsev, {V. V.} and Fadeev, {M. A.} and Zholudev, {M. S.} and Kudryavtsev, {K. E.} and Antonov, {A. V.} and Kadykov, {A. M.} and Dubinov, {A. A.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Gavrilenko, {V. I.}",
year = "2017",
month = nov,
day = "6",
doi = "10.1063/1.4996966",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",

}

RIS

TY - JOUR

T1 - Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m

AU - Morozov, S. V.

AU - Rumyantsev, V. V.

AU - Fadeev, M. A.

AU - Zholudev, M. S.

AU - Kudryavtsev, K. E.

AU - Antonov, A. V.

AU - Kadykov, A. M.

AU - Dubinov, A. A.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Gavrilenko, V. I.

PY - 2017/11/6

Y1 - 2017/11/6

N2 - We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

AB - We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

KW - MOLECULAR-BEAM EPITAXY

KW - CASCADE LASERS

KW - WAVE-GUIDE

KW - M RANGE

KW - LIFETIMES

KW - OPERATION

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85033563898&partnerID=8YFLogxK

U2 - 10.1063/1.4996966

DO - 10.1063/1.4996966

M3 - Article

AN - SCOPUS:85033563898

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192101

ER -

ID: 9698446