Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition › Research Explorer

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Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

Research output: Contribution to journal › Article › peer-review

Semiconductor Physics Section

DOI

https://doi.org/10.1016/j.jcrysgro.2019.05.026
Final published version

E. E. Rodyakina
S. V. Sitnikov
D. I. Rogilo
A. V. Latyshev

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Journal of Crystal Growth
Volume	520
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.05.026
Publication status	Published - 15 Aug 2019

OECD FOS+WOS

Research areas

A1. Mass transfer, A1. Morphological stability, A1.Electromigration, A1.Surface processes, B2.Semiconducting silicon, Morphological stability, ALTERNATION, SI(111), DRIFT, Mass transfer, INSTABILITIES, Electromigration, MOTION, GROWTH, Semiconducting silicon, DIFFUSION, Surface processes, MORPHOLOGY

ID: 20157357