Spinodal Decomposition in InSb/AlAs Heterostructures

Standard

Spinodal Decomposition in InSb/AlAs Heterostructures. / Abramkin, D. S.; Bakarov, A. K.; Gutakovskii, A. K. et al.

In: Semiconductors, Vol. 52, No. 11, 01.11.2018, p. 1392-1397.

Research output: Contribution to journal › Article › peer-review

Harvard

Abramkin, DS, Bakarov, AK, Gutakovskii, AK & Shamirzaev, TS 2018, 'Spinodal Decomposition in InSb/AlAs Heterostructures', Semiconductors, vol. 52, no. 11, pp. 1392-1397. https://doi.org/10.1134/S1063782618110027

APA

Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K., & Shamirzaev, T. S. (2018). Spinodal Decomposition in InSb/AlAs Heterostructures. Semiconductors, 52(11), 1392-1397. https://doi.org/10.1134/S1063782618110027

Vancouver

Abramkin DS, Bakarov AK, Gutakovskii AK, Shamirzaev TS. Spinodal Decomposition in InSb/AlAs Heterostructures. Semiconductors. 2018 Nov 1;52(11):1392-1397. doi: 10.1134/S1063782618110027

Author

Abramkin, D. S. ; Bakarov, A. K. ; Gutakovskii, A. K. et al. / Spinodal Decomposition in InSb/AlAs Heterostructures. In: Semiconductors. 2018 ; Vol. 52, No. 11. pp. 1392-1397.

BibTeX

@article{a6efece6816544c6a216c0e82207bf4a,

title = "Spinodal Decomposition in InSb/AlAs Heterostructures",

abstract = "The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 – xSbyAs1 – y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.",

keywords = "BAND",

author = "Abramkin, {D. S.} and Bakarov, {A. K.} and Gutakovskii, {A. K.} and Shamirzaev, {T. S.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = nov,

day = "1",

doi = "10.1134/S1063782618110027",

language = "English",

volume = "52",

pages = "1392--1397",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "11",

}

RIS

TY - JOUR

T1 - Spinodal Decomposition in InSb/AlAs Heterostructures

AU - Abramkin, D. S.

AU - Bakarov, A. K.

AU - Gutakovskii, A. K.

AU - Shamirzaev, T. S.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 – xSbyAs1 – y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.

AB - The atomic structure and energy spectrum of heterostructures formed in a system of InAs/AlAs binary compounds are studied. The InxAl1 – xSbyAs1 – y alloy, from which quantum wells are formed in InSb/AlAs structures, decomposes into two phases with different compositions. The characteristic dimensions of regions containing separate phases of the alloy in the structure plane are 5–7 nm. Spinodal decomposition of the alloy brings about the formation of coexisting indirect-gap regions with type-I and type-II energy spectra in quantum wells of the heterostructures.

KW - BAND

UR - http://www.scopus.com/inward/record.url?scp=85055262745&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110027

DO - 10.1134/S1063782618110027

M3 - Article

AN - SCOPUS:85055262745

VL - 52

SP - 1392

EP - 1397

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 17245181