Standard

Spin splitting of surface states in HgTe quantum wells. / Dobretsova, A. A.; Kvon, Z. D.; Krishtopenko, S. S. et al.

In: Low Temperature Physics, Vol. 45, No. 2, 01.02.2019, p. 159-164.

Research output: Contribution to journal › Article › peer-review

Harvard

Dobretsova, AA, Kvon, ZD, Krishtopenko, SS, Mikhailov, NN & Dvoretsky, SA 2019, 'Spin splitting of surface states in HgTe quantum wells', Low Temperature Physics, vol. 45, no. 2, pp. 159-164. https://doi.org/10.1063/1.5086405

APA

Dobretsova, A. A., Kvon, Z. D., Krishtopenko, S. S., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Spin splitting of surface states in HgTe quantum wells. Low Temperature Physics, 45(2), 159-164. https://doi.org/10.1063/1.5086405

Vancouver

Dobretsova AA, Kvon ZD, Krishtopenko SS, Mikhailov NN, Dvoretsky SA. Spin splitting of surface states in HgTe quantum wells. Low Temperature Physics. 2019 Feb 1;45(2):159-164. doi: 10.1063/1.5086405

Author

Dobretsova, A. A. ; Kvon, Z. D. ; Krishtopenko, S. S. et al. / Spin splitting of surface states in HgTe quantum wells. In: Low Temperature Physics. 2019 ; Vol. 45, No. 2. pp. 159-164.

BibTeX

@article{ff355ac3f89a46ac8068caa3a8c8f921,
title = "Spin splitting of surface states in HgTe quantum wells",
abstract = "We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schr{\"o}dinger equations with eight- band k . p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.",
keywords = "SINGLE DIRAC CONE, TOPOLOGICAL-INSULATOR, SCATTERING",
author = "Dobretsova, {A. A.} and Kvon, {Z. D.} and Krishtopenko, {S. S.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1063/1.5086405",
language = "English",
volume = "45",
pages = "159--164",
journal = "Low Temperature Physics",
issn = "1063-777X",
publisher = "American Institute of Physics",
number = "2",

}

RIS

TY - JOUR

T1 - Spin splitting of surface states in HgTe quantum wells

AU - Dobretsova, A. A.

AU - Kvon, Z. D.

AU - Krishtopenko, S. S.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eight- band k . p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.

AB - We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eight- band k . p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.

KW - SINGLE DIRAC CONE

KW - TOPOLOGICAL-INSULATOR

KW - SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85060960388&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=38672509

U2 - 10.1063/1.5086405

DO - 10.1063/1.5086405

M3 - Article

AN - SCOPUS:85060960388

VL - 45

SP - 159

EP - 164

JO - Low Temperature Physics

JF - Low Temperature Physics

SN - 1063-777X

IS - 2

ER -

ID: 18484635