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Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns. / Stepina, N. P.; Zinovieva, A. F.; Dvurechenskii, A. V. et al.

In: Applied Physics Letters, Vol. 110, No. 20, 203103, 15.05.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Stepina, NP, Zinovieva, AF, Dvurechenskii, AV, Noda, S, Molla, MZ & Samukawa, S 2017, 'Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns', Applied Physics Letters, vol. 110, no. 20, 203103. https://doi.org/10.1063/1.4983644

APA

Stepina, N. P., Zinovieva, A. F., Dvurechenskii, A. V., Noda, S., Molla, M. Z., & Samukawa, S. (2017). Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns. Applied Physics Letters, 110(20), [203103]. https://doi.org/10.1063/1.4983644

Vancouver

Stepina NP, Zinovieva AF, Dvurechenskii AV, Noda S, Molla MZ, Samukawa S. Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns. Applied Physics Letters. 2017 May 15;110(20):203103. doi: 10.1063/1.4983644

Author

Stepina, N. P. ; Zinovieva, A. F. ; Dvurechenskii, A. V. et al. / Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns. In: Applied Physics Letters. 2017 ; Vol. 110, No. 20.

BibTeX

@article{f75275242f694c9b8bea70431ce910d0,
title = "Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns",
abstract = "Separated nanocolumns (NCs) with embedded Si nanoclusters were prepared using the top-down technique that combines a bio-template and the defect-free neutral beam etching of Si0.75Ge0.25/Si/Si0.75Ge0.25 double-quantum-well layers. The electron spin resonance (ESR) was studied in the dark and under illumination for the structures with different lateral sizes of NCs. For the structure with a NC diameter in the range of 20-25 nm, the ESR signal is characterized by the isotropic line width. The spatial separation of nanoclusters results in the suppression of the Dyakonov-Perel mechanism of spin relaxation. A decrease in the NC diameter down to 13-14 nm leads to electron localization under the bottom of NCs, making the orientation dependence of the ESR line width anisotropic. Illumination results in the increase in spin lifetimes in both the types of NC structures, relocating the electrons to the center of NCs in the narrow NC structure, and making electron localization stronger in the thick NCs.",
keywords = "SILICON, RESONANCE",
author = "Stepina, {N. P.} and Zinovieva, {A. F.} and Dvurechenskii, {A. V.} and Shuichi Noda and Molla, {Md Zaman} and Seiji Samukawa",
year = "2017",
month = may,
day = "15",
doi = "10.1063/1.4983644",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "20",

}

RIS

TY - JOUR

T1 - Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

AU - Stepina, N. P.

AU - Zinovieva, A. F.

AU - Dvurechenskii, A. V.

AU - Noda, Shuichi

AU - Molla, Md Zaman

AU - Samukawa, Seiji

PY - 2017/5/15

Y1 - 2017/5/15

N2 - Separated nanocolumns (NCs) with embedded Si nanoclusters were prepared using the top-down technique that combines a bio-template and the defect-free neutral beam etching of Si0.75Ge0.25/Si/Si0.75Ge0.25 double-quantum-well layers. The electron spin resonance (ESR) was studied in the dark and under illumination for the structures with different lateral sizes of NCs. For the structure with a NC diameter in the range of 20-25 nm, the ESR signal is characterized by the isotropic line width. The spatial separation of nanoclusters results in the suppression of the Dyakonov-Perel mechanism of spin relaxation. A decrease in the NC diameter down to 13-14 nm leads to electron localization under the bottom of NCs, making the orientation dependence of the ESR line width anisotropic. Illumination results in the increase in spin lifetimes in both the types of NC structures, relocating the electrons to the center of NCs in the narrow NC structure, and making electron localization stronger in the thick NCs.

AB - Separated nanocolumns (NCs) with embedded Si nanoclusters were prepared using the top-down technique that combines a bio-template and the defect-free neutral beam etching of Si0.75Ge0.25/Si/Si0.75Ge0.25 double-quantum-well layers. The electron spin resonance (ESR) was studied in the dark and under illumination for the structures with different lateral sizes of NCs. For the structure with a NC diameter in the range of 20-25 nm, the ESR signal is characterized by the isotropic line width. The spatial separation of nanoclusters results in the suppression of the Dyakonov-Perel mechanism of spin relaxation. A decrease in the NC diameter down to 13-14 nm leads to electron localization under the bottom of NCs, making the orientation dependence of the ESR line width anisotropic. Illumination results in the increase in spin lifetimes in both the types of NC structures, relocating the electrons to the center of NCs in the narrow NC structure, and making electron localization stronger in the thick NCs.

KW - SILICON

KW - RESONANCE

UR - http://www.scopus.com/inward/record.url?scp=85019553967&partnerID=8YFLogxK

U2 - 10.1063/1.4983644

DO - 10.1063/1.4983644

M3 - Article

AN - SCOPUS:85019553967

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203103

ER -

ID: 10190506