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Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage. / Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

In: Journal of Nanophotonics, Vol. 11, No. 3, 32507, 01.07.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Kanygin, MA, Katkov, MV & Pershin, YV 2017, 'Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage', Journal of Nanophotonics, vol. 11, no. 3, 32507. https://doi.org/10.1117/1.JNP.11.032507

APA

Kanygin, M. A., Katkov, M. V., & Pershin, Y. V. (2017). Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage. Journal of Nanophotonics, 11(3), [32507]. https://doi.org/10.1117/1.JNP.11.032507

Vancouver

Kanygin MA, Katkov MV, Pershin YV. Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage. Journal of Nanophotonics. 2017 Jul 1;11(3):32507. doi: 10.1117/1.JNP.11.032507

Author

Kanygin, Mikhail A. ; Katkov, Mikhail V. ; Pershin, Yuriy V. / Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage. In: Journal of Nanophotonics. 2017 ; Vol. 11, No. 3.

BibTeX

@article{2358a9373ba24b34bbde3fa150f07a98,
title = "Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage",
abstract = "We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-Type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-Type memory devices.",
keywords = "Hysteresis, Memcapacitor, Memristor, THIN-FILMS, memristor, GRAPHENE, SYSTEMS, DEVICES, memcapacitor, hysteresis",
author = "Kanygin, {Mikhail A.} and Katkov, {Mikhail V.} and Pershin, {Yuriy V.}",
year = "2017",
month = jul,
day = "1",
doi = "10.1117/1.JNP.11.032507",
language = "English",
volume = "11",
journal = "Journal of Nanophotonics",
issn = "1934-2608",
publisher = "SPIE",
number = "3",

}

RIS

TY - JOUR

T1 - Similarity between the response of memristive & memcapacitive circuits subjected to ramped voltage

AU - Kanygin, Mikhail A.

AU - Katkov, Mikhail V.

AU - Pershin, Yuriy V.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-Type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-Type memory devices.

AB - We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-Type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-Type memory devices.

KW - Hysteresis

KW - Memcapacitor

KW - Memristor

KW - THIN-FILMS

KW - memristor

KW - GRAPHENE

KW - SYSTEMS

KW - DEVICES

KW - memcapacitor

KW - hysteresis

UR - http://www.scopus.com/inward/record.url?scp=85013059380&partnerID=8YFLogxK

U2 - 10.1117/1.JNP.11.032507

DO - 10.1117/1.JNP.11.032507

M3 - Article

AN - SCOPUS:85013059380

VL - 11

JO - Journal of Nanophotonics

JF - Journal of Nanophotonics

SN - 1934-2608

IS - 3

M1 - 32507

ER -

ID: 12691808