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Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system. / Nadolinny, Vladimir; Komarovskikh, Andrey; Palyanov, Yuri et al.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 212, No. 11, 2015, p. 2460-2462.

Research output: Contribution to journal › Article › peer-review

Harvard

Nadolinny, V, Komarovskikh, A, Palyanov, Y, Borzdov, Y, Kupriyanov, I, Rakhmanova, M & Yuryeva, O 2015, 'Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system', Physica Status Solidi (A) Applications and Materials Science, vol. 212, no. 11, pp. 2460-2462. https://doi.org/10.1002/pssa.201532165

APA

Nadolinny, V., Komarovskikh, A., Palyanov, Y., Borzdov, Y., Kupriyanov, I., Rakhmanova, M., & Yuryeva, O. (2015). Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system. Physica Status Solidi (A) Applications and Materials Science, 212(11), 2460-2462. https://doi.org/10.1002/pssa.201532165

Vancouver

Nadolinny V, Komarovskikh A, Palyanov Y, Borzdov Y, Kupriyanov I, Rakhmanova M et al. Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system. Physica Status Solidi (A) Applications and Materials Science. 2015;212(11):2460-2462. doi: 10.1002/pssa.201532165

Author

Nadolinny, Vladimir ; Komarovskikh, Andrey ; Palyanov, Yuri et al. / Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system. In: Physica Status Solidi (A) Applications and Materials Science. 2015 ; Vol. 212, No. 11. pp. 2460-2462.

BibTeX

@article{8c63afb411584b4a94e7b4c099943c4b,
title = "Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system",
abstract = "Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V)− defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.",
keywords = "defects, diamond, electron paramagnetic resonances, silicon",
author = "Vladimir Nadolinny and Andrey Komarovskikh and Yuri Palyanov and Yuri Borzdov and Igor Kupriyanov and Mariana Rakhmanova and Olga Yuryeva",
year = "2015",
doi = "10.1002/pssa.201532165",
language = "English",
volume = "212",
pages = "2460--2462",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "11",

}

RIS

TY - JOUR

T1 - Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system

AU - Nadolinny, Vladimir

AU - Komarovskikh, Andrey

AU - Palyanov, Yuri

AU - Borzdov, Yuri

AU - Kupriyanov, Igor

AU - Rakhmanova, Mariana

AU - Yuryeva, Olga

PY - 2015

Y1 - 2015

N2 - Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V)− defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.

AB - Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V)− defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.

KW - defects

KW - diamond

KW - electron paramagnetic resonances

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84929447965&partnerID=8YFLogxK

U2 - 10.1002/pssa.201532165

DO - 10.1002/pssa.201532165

M3 - Article

AN - SCOPUS:84929447965

VL - 212

SP - 2460

EP - 2462

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 11

ER -

ID: 25727374