Research output: Contribution to journal › Article › peer-review
Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system. / Nadolinny, Vladimir; Komarovskikh, Andrey; Palyanov, Yuri et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 212, No. 11, 2015, p. 2460-2462.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Silicon-containing defects in HPHT diamond synthetized in Mg–Si–C system
AU - Nadolinny, Vladimir
AU - Komarovskikh, Andrey
AU - Palyanov, Yuri
AU - Borzdov, Yuri
AU - Kupriyanov, Igor
AU - Rakhmanova, Mariana
AU - Yuryeva, Olga
PY - 2015
Y1 - 2015
N2 - Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V)− defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.
AB - Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V)− defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.
KW - defects
KW - diamond
KW - electron paramagnetic resonances
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84929447965&partnerID=8YFLogxK
U2 - 10.1002/pssa.201532165
DO - 10.1002/pssa.201532165
M3 - Article
AN - SCOPUS:84929447965
VL - 212
SP - 2460
EP - 2462
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 11
ER -
ID: 25727374