Research output: Contribution to journal › Article › peer-review
SiGe Mie resonators grown on photoactive silicon nanodisks for high-performance photodetection. / Aouassa, Mansour; Bouabdellaoui, Mohammed; Pessoa, Walter Batista et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 36, No. 6, 394, 27.02.2025.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - SiGe Mie resonators grown on photoactive silicon nanodisks for high-performance photodetection
AU - Aouassa, Mansour
AU - Bouabdellaoui, Mohammed
AU - Pessoa, Walter Batista
AU - Tsarev, Andrei
AU - Ibrahim, Mohammed
AU - Aladim, A. K.
AU - Saron, K. M.A.
AU - Berbezier, Isabelle
N1 - This work was funded by the Deanship of Graduate Studies and Scientific Research at Jouf University under Grant No. DGSSR-2023-02-02302.
PY - 2025/2/27
Y1 - 2025/2/27
N2 - This article presents a successful fabrication method for hemispheric SiGe nanocrystal-based Mie resonators on photoactive silicon nanodisks on an insulator, achieved through an innovative and scalable approach. This method combines solid-state dewetting of an ultra-thin silicon-on-insulator film (UT-SOI) with germanium growth via molecular beam epitaxy (MBE). The results demonstrate the formation of Mie resonators on silicon nanodisks with precisely defined hemispherical shapes and a homogeneous distribution of germanium in the SiGe core. Three-dimensional finite-difference time-domain (3D FDTD) simulations of the optical properties of SiGe/Si Mie resonators emphasize their capability to generate very high optical loss. This discovery sets the stage for designing compact and high-performance photodetectors with efficient photoactive silicon nanodisks. Moreover, post-integration electrical characterization of these Mie resonators in a MIS-type photodetector reveals their ability to induce a photovoltaic effect while preserving fundamental electrical characteristics. These findings represent a significant advancement in both the fabrication and integration of SiGe-based Mie resonators into optoelectronic devices, opening new avenues in the realms of integrated photonics and advanced optoelectronic technologies.
AB - This article presents a successful fabrication method for hemispheric SiGe nanocrystal-based Mie resonators on photoactive silicon nanodisks on an insulator, achieved through an innovative and scalable approach. This method combines solid-state dewetting of an ultra-thin silicon-on-insulator film (UT-SOI) with germanium growth via molecular beam epitaxy (MBE). The results demonstrate the formation of Mie resonators on silicon nanodisks with precisely defined hemispherical shapes and a homogeneous distribution of germanium in the SiGe core. Three-dimensional finite-difference time-domain (3D FDTD) simulations of the optical properties of SiGe/Si Mie resonators emphasize their capability to generate very high optical loss. This discovery sets the stage for designing compact and high-performance photodetectors with efficient photoactive silicon nanodisks. Moreover, post-integration electrical characterization of these Mie resonators in a MIS-type photodetector reveals their ability to induce a photovoltaic effect while preserving fundamental electrical characteristics. These findings represent a significant advancement in both the fabrication and integration of SiGe-based Mie resonators into optoelectronic devices, opening new avenues in the realms of integrated photonics and advanced optoelectronic technologies.
KW - Silicon on insulator technology
KW - De-wetting
KW - Fabrication method
UR - https://www.mendeley.com/catalogue/65a7604a-ef4c-3261-a56d-649a3ca91ae3/
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85219640704&origin=inward&txGid=e4963e6c54d3c243c8390e594787393c
U2 - 10.1007/s10854-025-14447-1
DO - 10.1007/s10854-025-14447-1
M3 - Article
VL - 36
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 6
M1 - 394
ER -
ID: 64960147