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Si-based light emitters synthesized with Ge+ ion bombardment. / Zinovyev, V. A.; Zinovieva, A. F.; Smagina, Zh V. et al.

In: Journal of Applied Physics, Vol. 130, No. 15, 153101, 21.10.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Zinovyev, VA, Zinovieva, AF, Smagina, ZV, Dvurechenskii, AV, Vdovin, VI, Gutakovskii, AK, Fedina, LI, Borodavchenko, OM, Zhivulko, VD & Mudryi, AV 2021, 'Si-based light emitters synthesized with Ge+ ion bombardment', Journal of Applied Physics, vol. 130, no. 15, 153101. https://doi.org/10.1063/5.0063592

APA

Zinovyev, V. A., Zinovieva, A. F., Smagina, Z. V., Dvurechenskii, A. V., Vdovin, V. I., Gutakovskii, A. K., Fedina, L. I., Borodavchenko, O. M., Zhivulko, V. D., & Mudryi, A. V. (2021). Si-based light emitters synthesized with Ge+ ion bombardment. Journal of Applied Physics, 130(15), [153101]. https://doi.org/10.1063/5.0063592

Vancouver

Zinovyev VA, Zinovieva AF, Smagina ZV, Dvurechenskii AV, Vdovin VI, Gutakovskii AK et al. Si-based light emitters synthesized with Ge+ ion bombardment. Journal of Applied Physics. 2021 Oct 21;130(15):153101. doi: 10.1063/5.0063592

Author

Zinovyev, V. A. ; Zinovieva, A. F. ; Smagina, Zh V. et al. / Si-based light emitters synthesized with Ge+ ion bombardment. In: Journal of Applied Physics. 2021 ; Vol. 130, No. 15.

BibTeX

@article{1542a02388794e36b69759d00d0d8611,
title = "Si-based light emitters synthesized with Ge+ ion bombardment",
abstract = "The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of and subsequent thermal annealing. The PL measurements confirm the advantage of Ge/Si structures synthesized using Ge ion bombardment over the usual epitaxial structures with GeSi quantum dots. The presence of defects produced by Ge implantation results in pronounced PL at telecom wavelengths up to room temperature. The results provide a basis for creating efficient light emitters compatible with the existing Si technology.",
author = "Zinovyev, {V. A.} and Zinovieva, {A. F.} and Smagina, {Zh V.} and Dvurechenskii, {A. V.} and Vdovin, {V. I.} and Gutakovskii, {A. K.} and Fedina, {L. I.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Mudryi, {A. V.}",
note = "Funding Information: This work is funded by the Russian Science Foundation (No. 19-12-00070) in the part of the synthesis of Ge/Si structures with Ge ion bombardment. The photoluminescence study was supported by the Belarussian Republican Foundation for Fundamental Research (Project No. F20R-092) and RFBR (Project No. 20-52-00016). HRTEM investigations using the equipment of ISP Center of shared-use facility “Nanostructures” were funded by RSF project No. 19-72-30023. The authors gratefully acknowledge V. A. Armbrister for the growth of experimental structures. Publisher Copyright: {\textcopyright} 2021 Author(s).",
year = "2021",
month = oct,
day = "21",
doi = "10.1063/5.0063592",
language = "English",
volume = "130",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "15",

}

RIS

TY - JOUR

T1 - Si-based light emitters synthesized with Ge+ ion bombardment

AU - Zinovyev, V. A.

AU - Zinovieva, A. F.

AU - Smagina, Zh V.

AU - Dvurechenskii, A. V.

AU - Vdovin, V. I.

AU - Gutakovskii, A. K.

AU - Fedina, L. I.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

N1 - Funding Information: This work is funded by the Russian Science Foundation (No. 19-12-00070) in the part of the synthesis of Ge/Si structures with Ge ion bombardment. The photoluminescence study was supported by the Belarussian Republican Foundation for Fundamental Research (Project No. F20R-092) and RFBR (Project No. 20-52-00016). HRTEM investigations using the equipment of ISP Center of shared-use facility “Nanostructures” were funded by RSF project No. 19-72-30023. The authors gratefully acknowledge V. A. Armbrister for the growth of experimental structures. Publisher Copyright: © 2021 Author(s).

PY - 2021/10/21

Y1 - 2021/10/21

N2 - The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of and subsequent thermal annealing. The PL measurements confirm the advantage of Ge/Si structures synthesized using Ge ion bombardment over the usual epitaxial structures with GeSi quantum dots. The presence of defects produced by Ge implantation results in pronounced PL at telecom wavelengths up to room temperature. The results provide a basis for creating efficient light emitters compatible with the existing Si technology.

AB - The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of and subsequent thermal annealing. The PL measurements confirm the advantage of Ge/Si structures synthesized using Ge ion bombardment over the usual epitaxial structures with GeSi quantum dots. The presence of defects produced by Ge implantation results in pronounced PL at telecom wavelengths up to room temperature. The results provide a basis for creating efficient light emitters compatible with the existing Si technology.

UR - http://www.scopus.com/inward/record.url?scp=85117202188&partnerID=8YFLogxK

U2 - 10.1063/5.0063592

DO - 10.1063/5.0063592

M3 - Article

AN - SCOPUS:85117202188

VL - 130

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 15

M1 - 153101

ER -

ID: 34464575