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Short-Range Order and Charge Transport in SiO x : Experiment and Numerical Simulation. / Gritsenko, V. A.; Novikov, Yu N.; Chin, A.

In: Technical Physics Letters, Vol. 44, No. 6, 01.06.2018, p. 541-544.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA, Novikov, YN & Chin, A 2018, 'Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation', Technical Physics Letters, vol. 44, no. 6, pp. 541-544. https://doi.org/10.1134/S1063785018060196

APA

Gritsenko, V. A., Novikov, Y. N., & Chin, A. (2018). Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation. Technical Physics Letters, 44(6), 541-544. https://doi.org/10.1134/S1063785018060196

Vancouver

Gritsenko VA, Novikov YN, Chin A. Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation. Technical Physics Letters. 2018 Jun 1;44(6):541-544. doi: 10.1134/S1063785018060196

Author

Gritsenko, V. A. ; Novikov, Yu N. ; Chin, A. / Short-Range Order and Charge Transport in SiO x : Experiment and Numerical Simulation. In: Technical Physics Letters. 2018 ; Vol. 44, No. 6. pp. 541-544.

BibTeX

@article{63d1c6bacf354430a8f726d9db807fa2,
title = "Short-Range Order and Charge Transport in SiO x: Experiment and Numerical Simulation",
abstract = "The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.",
author = "Gritsenko, {V. A.} and Novikov, {Yu N.} and A. Chin",
year = "2018",
month = jun,
day = "1",
doi = "10.1134/S1063785018060196",
language = "English",
volume = "44",
pages = "541--544",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Short-Range Order and Charge Transport in SiO x

T2 - Experiment and Numerical Simulation

AU - Gritsenko, V. A.

AU - Novikov, Yu N.

AU - Chin, A.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.

AB - The structure of nonstoichiometric silicon oxide (SiOx) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiOx (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiOx structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiOx is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiOx films is about 3 nm. The electron-percolation energy in SiO1.4 and SiO1.6 films is estimated to be 0.5 and 0.8 eV, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85050148129&partnerID=8YFLogxK

U2 - 10.1134/S1063785018060196

DO - 10.1134/S1063785018060196

M3 - Article

AN - SCOPUS:85050148129

VL - 44

SP - 541

EP - 544

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -

ID: 15951026