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Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions. / Budazhapova, Anastasia E.; Shklyaev, Alexander A.

2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July IEEE Computer Society, 2018. p. 16-18 8434951.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Budazhapova, AE & Shklyaev, AA 2018, Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions. in 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. vol. 2018-July, 8434951, IEEE Computer Society, pp. 16-18, 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018, Erlagol, Altai, Russian Federation, 29.06.2018. https://doi.org/10.1109/EDM.2018.8434951

APA

Budazhapova, A. E., & Shklyaev, A. A. (2018). Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions. In 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings (Vol. 2018-July, pp. 16-18). [8434951] IEEE Computer Society. https://doi.org/10.1109/EDM.2018.8434951

Vancouver

Budazhapova AE, Shklyaev AA. Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions. In 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July. IEEE Computer Society. 2018. p. 16-18. 8434951 doi: 10.1109/EDM.2018.8434951

Author

Budazhapova, Anastasia E. ; Shklyaev, Alexander A. / Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions. 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July IEEE Computer Society, 2018. pp. 16-18

BibTeX

@inproceedings{591113861d734fadbbd75307e31fd940,
title = "Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions",
abstract = "The shape of the islands formed during the Ge deposition on Si(100) surfaces in dewetting conditions is analyzed on the basis of surface layer energy minimization. An analytical expression for the total energy is derived for the sphere segment-shaped islands with contact angles up to 180° with respect to the substrate. It is found that the island shape is determined by the balance between the surface energy of the Si substrate areas located around the islands and the elastic energy of the areas around the island/substrate interface.",
keywords = "Island shapes, Solid-state dewetting, Surface layer energy",
author = "Budazhapova, {Anastasia E.} and Shklyaev, {Alexander A.}",
year = "2018",
month = aug,
day = "13",
doi = "10.1109/EDM.2018.8434951",
language = "English",
isbn = "9781538650219",
volume = "2018-July",
pages = "16--18",
booktitle = "2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings",
publisher = "IEEE Computer Society",
address = "United States",
note = "19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 ; Conference date: 29-06-2018 Through 03-07-2018",

}

RIS

TY - GEN

T1 - Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions

AU - Budazhapova, Anastasia E.

AU - Shklyaev, Alexander A.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - The shape of the islands formed during the Ge deposition on Si(100) surfaces in dewetting conditions is analyzed on the basis of surface layer energy minimization. An analytical expression for the total energy is derived for the sphere segment-shaped islands with contact angles up to 180° with respect to the substrate. It is found that the island shape is determined by the balance between the surface energy of the Si substrate areas located around the islands and the elastic energy of the areas around the island/substrate interface.

AB - The shape of the islands formed during the Ge deposition on Si(100) surfaces in dewetting conditions is analyzed on the basis of surface layer energy minimization. An analytical expression for the total energy is derived for the sphere segment-shaped islands with contact angles up to 180° with respect to the substrate. It is found that the island shape is determined by the balance between the surface energy of the Si substrate areas located around the islands and the elastic energy of the areas around the island/substrate interface.

KW - Island shapes

KW - Solid-state dewetting

KW - Surface layer energy

UR - http://www.scopus.com/inward/record.url?scp=85052377856&partnerID=8YFLogxK

U2 - 10.1109/EDM.2018.8434951

DO - 10.1109/EDM.2018.8434951

M3 - Conference contribution

AN - SCOPUS:85052377856

SN - 9781538650219

VL - 2018-July

SP - 16

EP - 18

BT - 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings

PB - IEEE Computer Society

T2 - 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018

Y2 - 29 June 2018 through 3 July 2018

ER -

ID: 16238487