Standard

Sensitivity of PbSnTe : In films to the radiation of free electron laser. / Akimov, A. N.; Epov, V. S.; Klimov, A. E. et al.

In: Journal of Physics: Conference Series, Vol. 946, No. 1, 012016, 23.02.2018.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Akimov, AN, Epov, VS, Klimov, AE, Kubarev, VV & Paschin, NS 2018, 'Sensitivity of PbSnTe: In films to the radiation of free electron laser', Journal of Physics: Conference Series, vol. 946, no. 1, 012016. https://doi.org/10.1088/1742-6596/946/1/012016

APA

Akimov, A. N., Epov, V. S., Klimov, A. E., Kubarev, V. V., & Paschin, N. S. (2018). Sensitivity of PbSnTe: In films to the radiation of free electron laser. Journal of Physics: Conference Series, 946(1), [012016]. https://doi.org/10.1088/1742-6596/946/1/012016

Vancouver

Akimov AN, Epov VS, Klimov AE, Kubarev VV, Paschin NS. Sensitivity of PbSnTe: In films to the radiation of free electron laser. Journal of Physics: Conference Series. 2018 Feb 23;946(1):012016. doi: 10.1088/1742-6596/946/1/012016

Author

Akimov, A. N. ; Epov, V. S. ; Klimov, A. E. et al. / Sensitivity of PbSnTe : In films to the radiation of free electron laser. In: Journal of Physics: Conference Series. 2018 ; Vol. 946, No. 1.

BibTeX

@article{5a3b4bed5534454789d87e94ab2a1307,
title = "Sensitivity of PbSnTe: In films to the radiation of free electron laser",
abstract = "The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.",
keywords = "STATES",
author = "Akimov, {A. N.} and Epov, {V. S.} and Klimov, {A. E.} and Kubarev, {V. V.} and Paschin, {N. S.}",
year = "2018",
month = feb,
day = "23",
doi = "10.1088/1742-6596/946/1/012016",
language = "English",
volume = "946",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Sensitivity of PbSnTe

T2 - In films to the radiation of free electron laser

AU - Akimov, A. N.

AU - Epov, V. S.

AU - Klimov, A. E.

AU - Kubarev, V. V.

AU - Paschin, N. S.

PY - 2018/2/23

Y1 - 2018/2/23

N2 - The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

AB - The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-xSn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85043703659&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/946/1/012016

DO - 10.1088/1742-6596/946/1/012016

M3 - Conference article

AN - SCOPUS:85043703659

VL - 946

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012016

ER -

ID: 10524141