TY - JOUR

T1 - Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots

AU - Zinovyev, Vladimir A.

AU - Stepikhova, Margarita V

AU - Smagina, Zhanna V

AU - Zinovieva, Aigul F

AU - Bloshkin, Alexey A.

AU - Rodyakina, Ekaterina E.

AU - Mikhailovskii, Mikhail S.

AU - Petrov, Mihail I.

AU - Novikov, Alexey V.

PY - 2024/10/21

Y1 - 2024/10/21

N2 - The emission properties of a single Si microdisk resonator with a deterministically embedded GeSi quantum dot (QD) stack have been investigated. The results demonstrate selective excitation of different modes of the resonator depending on the position of QDs. The photoluminescence (PL) spectrum changes dramatically depending on the location of the QDs in the resonator. For the central QD position, the excitation of low Q-factor Mie modes with high field concentration in the center of resonator results in the appearance of a broad PL band. When the stack of QDs is shifted from the center to the edge of the Si resonator, the quenching of this PL band is observed and narrow PL peaks corresponding to whispering gallery modes (WGMs) appear in the PL spectrum. It is found that resonator modes can be excited not only by QDs but also by the radiation of the wetting layer. It is shown that a GeSi island on the top of the QD stack, not covered by silicon, can play the role of a nanoantenna, redirecting radiation to the upper half-space, which is especially important for WGMs that usually radiate sideways.

AB - The emission properties of a single Si microdisk resonator with a deterministically embedded GeSi quantum dot (QD) stack have been investigated. The results demonstrate selective excitation of different modes of the resonator depending on the position of QDs. The photoluminescence (PL) spectrum changes dramatically depending on the location of the QDs in the resonator. For the central QD position, the excitation of low Q-factor Mie modes with high field concentration in the center of resonator results in the appearance of a broad PL band. When the stack of QDs is shifted from the center to the edge of the Si resonator, the quenching of this PL band is observed and narrow PL peaks corresponding to whispering gallery modes (WGMs) appear in the PL spectrum. It is found that resonator modes can be excited not only by QDs but also by the radiation of the wetting layer. It is shown that a GeSi island on the top of the QD stack, not covered by silicon, can play the role of a nanoantenna, redirecting radiation to the upper half-space, which is especially important for WGMs that usually radiate sideways.

UR - https://pubs.aip.org/jap/article/136/15/153103/3317336/Selective-excitation-of-photon-modes-in-silicon

UR - https://www.mendeley.com/catalogue/e1be3d0f-88a2-31e7-ac68-51242076098f/

U2 - 10.1063/5.0236022

DO - 10.1063/5.0236022

M3 - Article

VL - 136

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 15

M1 - 153103

ER -