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Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots. / Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A. et al.

In: JETP Letters, Vol. 105, No. 7, 01.04.2017, p. 426-429.

Research output: Contribution to journal › Article › peer-review

Harvard

Yakimov, AI, Kirienko, VV, Armbrister, VA & Dvurechenskii, AV 2017, 'Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots', JETP Letters, vol. 105, no. 7, pp. 426-429. https://doi.org/10.1134/S002136401707013X

APA

Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., & Dvurechenskii, A. V. (2017). Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots. JETP Letters, 105(7), 426-429. https://doi.org/10.1134/S002136401707013X

Vancouver

Yakimov AI, Kirienko VV, Armbrister VA, Dvurechenskii AV. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots. JETP Letters. 2017 Apr 1;105(7):426-429. doi: 10.1134/S002136401707013X

Author

Yakimov, A. I. ; Kirienko, V. V. ; Armbrister, V. A. et al. / Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots. In: JETP Letters. 2017 ; Vol. 105, No. 7. pp. 426-429.

BibTeX

@article{f9e147a5847e4b8891484eee80121bd8,
title = "Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots",
abstract = "It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.",
author = "Yakimov, {A. I.} and Kirienko, {V. V.} and Armbrister, {V. A.} and Dvurechenskii, {A. V.}",
year = "2017",
month = apr,
day = "1",
doi = "10.1134/S002136401707013X",
language = "English",
volume = "105",
pages = "426--429",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "7",

}

RIS

TY - JOUR

T1 - Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

AU - Yakimov, A. I.

AU - Kirienko, V. V.

AU - Armbrister, V. A.

AU - Dvurechenskii, A. V.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.

AB - It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=85021445876&partnerID=8YFLogxK

U2 - 10.1134/S002136401707013X

DO - 10.1134/S002136401707013X

M3 - Article

AN - SCOPUS:85021445876

VL - 105

SP - 426

EP - 429

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 7

ER -

ID: 10036244