Scattering anisotropy in HgTe (013) quantum well

Standard

Scattering anisotropy in HgTe (013) quantum well. / Khudaiberdiev, D. A.; Savchenko, M. L.; Kozlov, D. A. et al.

In: Applied Physics Letters, Vol. 121, No. 8, 083101, 22.08.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Khudaiberdiev, DA, Savchenko, ML, Kozlov, DA, Mikhailov, NN & Kvon, ZD 2022, 'Scattering anisotropy in HgTe (013) quantum well', Applied Physics Letters, vol. 121, no. 8, 083101. https://doi.org/10.1063/5.0101932

APA

Khudaiberdiev, D. A., Savchenko, M. L., Kozlov, D. A., Mikhailov, N. N., & Kvon, Z. D. (2022). Scattering anisotropy in HgTe (013) quantum well. Applied Physics Letters, 121(8), [083101]. https://doi.org/10.1063/5.0101932

Vancouver

Khudaiberdiev DA, Savchenko ML, Kozlov DA, Mikhailov NN, Kvon ZD. Scattering anisotropy in HgTe (013) quantum well. Applied Physics Letters. 2022 Aug 22;121(8):083101. doi: 10.1063/5.0101932

Author

Khudaiberdiev, D. A. ; Savchenko, M. L. ; Kozlov, D. A. et al. / Scattering anisotropy in HgTe (013) quantum well. In: Applied Physics Letters. 2022 ; Vol. 121, No. 8.

BibTeX

@article{d3dd5163622f440db9142d8f7e92e159,

title = "Scattering anisotropy in HgTe (013) quantum well",

abstract = "We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions [100] and [03 1 ¯] as the electron density function n. The anisotropy is absent at the minimal electron density near a charge neutrality point. The anisotropy increases with the increase in n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase in the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason for such a strong change in the anisotropy remains unknown. ",

author = "Khudaiberdiev, {D. A.} and Savchenko, {M. L.} and Kozlov, {D. A.} and Mikhailov, {N. N.} and Kvon, {Z. D.}",

note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = aug,

day = "22",

doi = "10.1063/5.0101932",

language = "English",

volume = "121",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

RIS

TY - JOUR

T1 - Scattering anisotropy in HgTe (013) quantum well

AU - Khudaiberdiev, D. A.

AU - Savchenko, M. L.

AU - Kozlov, D. A.

AU - Mikhailov, N. N.

AU - Kvon, Z. D.

PY - 2022/8/22

Y1 - 2022/8/22

N2 - We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions [100] and [03 1 ¯] as the electron density function n. The anisotropy is absent at the minimal electron density near a charge neutrality point. The anisotropy increases with the increase in n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase in the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason for such a strong change in the anisotropy remains unknown.

AB - We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions [100] and [03 1 ¯] as the electron density function n. The anisotropy is absent at the minimal electron density near a charge neutrality point. The anisotropy increases with the increase in n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase in the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason for such a strong change in the anisotropy remains unknown.

UR - http://www.scopus.com/inward/record.url?scp=85137144986&partnerID=8YFLogxK

U2 - 10.1063/5.0101932

DO - 10.1063/5.0101932

M3 - Article

AN - SCOPUS:85137144986

VL - 121

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 083101

ER -

ID: 37111469