Research output: Contribution to journal › Article › peer-review
Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells. / Timofeev, Vyacheslav A.; Mashanov, Vladimir I.; Nikiforov, Alexandr I. et al.
In: Materials Today Physics, Vol. 33, 101052, 04.2023.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells
AU - Timofeev, Vyacheslav A.
AU - Mashanov, Vladimir I.
AU - Nikiforov, Alexandr I.
AU - Skvortsov, Ilya V.
AU - Gayduk, Alexey E.
AU - Bloshkin, Alexey A.
AU - Kirienko, Viktor V.
AU - Utkin, Dmitry E.
AU - Kolyada, Dmitry V.
AU - Firsov, Dmitry D.
AU - Komkov, Oleg S.
N1 - This work was supported by the Russian Science Foundation (RSF), Grant No. 20-79-10092. The SEM study was carried out using the equipment of CCP “Nanostructures”. Furthermore, we thank the Analytical and Technological Research Center in the Physics Department of the Novosibirsk State University.
PY - 2023/4
Y1 - 2023/4
N2 - The GeSiSn/Si structures surface with multiple quantum wells (MQWs) was modified by developing photonic crystals (PCs) to increase the photoluminescence and photoresponse near 2 μm. The structural parameters of GeSiSn/Si MQWs obtained by molecular-beam epitaxy were optimized, and PCs were formed. They consisted of a periodic cylindrical hole array. Numerical simulation methods were used to optimize the hole depth, which makes it possible to effectively excite quasi-guided modes and not affect the active layer including GeSiSn/Si MQWs. The increase of the photoluminescence (PL) signal related to vacancy complexes was observed for all samples with the PC structure. The maximum PL amplification of about 5 times at the wavelength near 2 μm was demonstrated. The annealing of PC structures with GeSiSn/Si MQWs resulted in the appearance of PL associated with interband optical transitions. The PL enhancement was observed by almost an order of magnitude in the narrow wavelength range with the PL maximum near 1.8 μm. Based on Ge0.84Si0·076Sn0·084/Si MQWs p-i-n photodiodes with the PC, the photoresponse increase was shown in the wide wavelength range up to 1.8 μm.
AB - The GeSiSn/Si structures surface with multiple quantum wells (MQWs) was modified by developing photonic crystals (PCs) to increase the photoluminescence and photoresponse near 2 μm. The structural parameters of GeSiSn/Si MQWs obtained by molecular-beam epitaxy were optimized, and PCs were formed. They consisted of a periodic cylindrical hole array. Numerical simulation methods were used to optimize the hole depth, which makes it possible to effectively excite quasi-guided modes and not affect the active layer including GeSiSn/Si MQWs. The increase of the photoluminescence (PL) signal related to vacancy complexes was observed for all samples with the PC structure. The maximum PL amplification of about 5 times at the wavelength near 2 μm was demonstrated. The annealing of PC structures with GeSiSn/Si MQWs resulted in the appearance of PL associated with interband optical transitions. The PL enhancement was observed by almost an order of magnitude in the narrow wavelength range with the PL maximum near 1.8 μm. Based on Ge0.84Si0·076Sn0·084/Si MQWs p-i-n photodiodes with the PC, the photoresponse increase was shown in the wide wavelength range up to 1.8 μm.
KW - Germanium-silicon-tin
KW - Multiple quantum well
KW - Photodiode
KW - Photoluminescence
KW - Photonic crystal
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85150485922&origin=inward&txGid=ba0b7807c3752ea1b9bb843f413b3309
UR - https://www.mendeley.com/catalogue/a74d08b2-642d-3b47-9306-d6f71614e880/
U2 - 10.1016/j.mtphys.2023.101052
DO - 10.1016/j.mtphys.2023.101052
M3 - Article
VL - 33
JO - Materials Today Physics
JF - Materials Today Physics
SN - 2542-5293
M1 - 101052
ER -
ID: 59245161