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Release of carriers from traps enhanced by hopping. / Nenashev, A. V.; Valkovskii, V. V.; Oelerich, J. O. et al.

In: Physical Review B, Vol. 98, No. 15, 155207, 30.10.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Nenashev, AV, Valkovskii, VV, Oelerich, JO, Dvurechenskii, AV, Semeniuk, O, Reznik, A, Gebhard, F & Baranovskii, SD 2018, 'Release of carriers from traps enhanced by hopping', Physical Review B, vol. 98, no. 15, 155207. https://doi.org/10.1103/PhysRevB.98.155207

APA

Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F., & Baranovskii, S. D. (2018). Release of carriers from traps enhanced by hopping. Physical Review B, 98(15), [155207]. https://doi.org/10.1103/PhysRevB.98.155207

Vancouver

Nenashev AV, Valkovskii VV, Oelerich JO, Dvurechenskii AV, Semeniuk O, Reznik A et al. Release of carriers from traps enhanced by hopping. Physical Review B. 2018 Oct 30;98(15):155207. doi: 10.1103/PhysRevB.98.155207

Author

Nenashev, A. V. ; Valkovskii, V. V. ; Oelerich, J. O. et al. / Release of carriers from traps enhanced by hopping. In: Physical Review B. 2018 ; Vol. 98, No. 15.

BibTeX

@article{157013e7aef64c618da3c23ddef8903c,
title = "Release of carriers from traps enhanced by hopping",
abstract = "Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the conduction band can be substantially enhanced by hopping of electrons between the traps. The effect strongly depends on several factors, such as the energy depth of the given trap, the concentration of the assisting traps, and the magnitude of the applied electric field. Recipes are given for theoretical studies of the effect by analytical equations and by kinetic Monte Carlo simulations.",
keywords = "ORGANIC MATERIALS, SEMICONDUCTORS, VIBRATIONS, FIELD",
author = "Nenashev, {A. V.} and Valkovskii, {V. V.} and Oelerich, {J. O.} and Dvurechenskii, {A. V.} and O. Semeniuk and A. Reznik and F. Gebhard and Baranovskii, {S. D.}",
year = "2018",
month = oct,
day = "30",
doi = "10.1103/PhysRevB.98.155207",
language = "English",
volume = "98",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "15",

}

RIS

TY - JOUR

T1 - Release of carriers from traps enhanced by hopping

AU - Nenashev, A. V.

AU - Valkovskii, V. V.

AU - Oelerich, J. O.

AU - Dvurechenskii, A. V.

AU - Semeniuk, O.

AU - Reznik, A.

AU - Gebhard, F.

AU - Baranovskii, S. D.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the conduction band can be substantially enhanced by hopping of electrons between the traps. The effect strongly depends on several factors, such as the energy depth of the given trap, the concentration of the assisting traps, and the magnitude of the applied electric field. Recipes are given for theoretical studies of the effect by analytical equations and by kinetic Monte Carlo simulations.

AB - Trapping of electrons in localized states strongly affects optoelectronic phenomena in disordered semiconductors. In this paper, it is shown by numerical simulations and by analytical calculations that the release of the trapped electrons into the conduction band can be substantially enhanced by hopping of electrons between the traps. The effect strongly depends on several factors, such as the energy depth of the given trap, the concentration of the assisting traps, and the magnitude of the applied electric field. Recipes are given for theoretical studies of the effect by analytical equations and by kinetic Monte Carlo simulations.

KW - ORGANIC MATERIALS

KW - SEMICONDUCTORS

KW - VIBRATIONS

KW - FIELD

UR - http://www.scopus.com/inward/record.url?scp=85056265379&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.98.155207

DO - 10.1103/PhysRevB.98.155207

M3 - Article

AN - SCOPUS:85056265379

VL - 98

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 15

M1 - 155207

ER -

ID: 17414500