Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures

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Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures. / Khoroshilov, V. S.; Kazantsev, D. M.; Zhuravlev, A. G.

In: Journal of Physics: Conference Series, Vol. 1199, No. 1, 012011, 17.04.2019.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{f6ed22c2ba9842b7a36becfe9f58031a,

title = "Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures",

abstract = "The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.",

author = "Khoroshilov, {V. S.} and Kazantsev, {D. M.} and Zhuravlev, {A. G.}",

year = "2019",

month = apr,

day = "17",

doi = "10.1088/1742-6596/1199/1/012011",

language = "English",

volume = "1199",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 ; Conference date: 26-11-2018 Through 30-11-2018",

}

RIS

TY - JOUR

T1 - Relaxational kinetics of photoemission from Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures

AU - Khoroshilov, V. S.

AU - Kazantsev, D. M.

AU - Zhuravlev, A. G.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.

AB - The relaxational kinetics of the photoemission from the Cs/GaAs and GaAs(Cs,O) surfaces at elevated temperatures is studied. It was found that heating to moderate temperatures of about 150°C leads to substantial changes in the amplitude and shape of the Cs coverage dependences of the photoemission current, along with the changes of its relaxational kinetics after the cesium deposition. After the oxygen exposure on the GaAs(Cs,O) surface, a photoemission relaxational increase is observed due to changes in the affinity. The temperature dependences of the amplitude and decay time of the relaxational kinetics on the Cs/GaAs and GaAs(Cs,O) surfaces were obtained.

UR - http://www.scopus.com/inward/record.url?scp=85065625611&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012011

DO - 10.1088/1742-6596/1199/1/012011

M3 - Conference article

AN - SCOPUS:85065625611

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012011

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -

ID: 20051276