Standard

Raman scattering in the submicrometer diamond membrane formed by the lift-off technique. / Tareeva, M. V.; Antonov, V. A.; Popov, V. P. et al.

In: Bulletin of the Lebedev Physics Institute, Vol. 44, No. 7, 01.07.2017, p. 210-214.

Research output: Contribution to journal › Article › peer-review

Harvard

Tareeva, MV, Antonov, VA, Popov, VP, Palyanov, YN, Tsarik, KA & Litvinova, AO 2017, 'Raman scattering in the submicrometer diamond membrane formed by the lift-off technique', Bulletin of the Lebedev Physics Institute, vol. 44, no. 7, pp. 210-214. https://doi.org/10.3103/S1068335617070065

APA

Tareeva, M. V., Antonov, V. A., Popov, V. P., Palyanov, Y. N., Tsarik, K. A., & Litvinova, A. O. (2017). Raman scattering in the submicrometer diamond membrane formed by the lift-off technique. Bulletin of the Lebedev Physics Institute, 44(7), 210-214. https://doi.org/10.3103/S1068335617070065

Vancouver

Tareeva MV, Antonov VA, Popov VP, Palyanov YN, Tsarik KA, Litvinova AO. Raman scattering in the submicrometer diamond membrane formed by the lift-off technique. Bulletin of the Lebedev Physics Institute. 2017 Jul 1;44(7):210-214. doi: 10.3103/S1068335617070065

Author

Tareeva, M. V. ; Antonov, V. A. ; Popov, V. P. et al. / Raman scattering in the submicrometer diamond membrane formed by the lift-off technique. In: Bulletin of the Lebedev Physics Institute. 2017 ; Vol. 44, No. 7. pp. 210-214.

BibTeX

@article{660a0aba1e154e88bcda5edd9e18a064,
title = "Raman scattering in the submicrometer diamond membrane formed by the lift-off technique",
abstract = "Spectral characteristics of spontaneous Raman scattering in the submicrometer diamond membrane grown by the hydrogen implantation method are studied in comparison with the single-crystal diamond matrix. A shift in the main line of diamond one-photon excitation (sp3-hybridization) at a frequency of 1324 cm−1 is revealed in the diamond membrane. This fact indicates multiple internal strains (residual compression strains) due to residual defects and is a concequence of the use of the hydrogen implantation method (hydrogen is implanted into diamond to form a sacrificial layer.",
keywords = "hydrogen ion implantation, lift-off technique, optically active NV-centers, Raman scattering, single-crystal CVD HPHT-diamond membrane",
author = "Tareeva, {M. V.} and Antonov, {V. A.} and Popov, {V. P.} and Palyanov, {Yu N.} and Tsarik, {K. A.} and Litvinova, {A. O.}",
year = "2017",
month = jul,
day = "1",
doi = "10.3103/S1068335617070065",
language = "English",
volume = "44",
pages = "210--214",
journal = "Bulletin of the Lebedev Physics Institute",
issn = "1068-3356",
publisher = "Springer Science + Business Media",
number = "7",

}

RIS

TY - JOUR

T1 - Raman scattering in the submicrometer diamond membrane formed by the lift-off technique

AU - Tareeva, M. V.

AU - Antonov, V. A.

AU - Popov, V. P.

AU - Palyanov, Yu N.

AU - Tsarik, K. A.

AU - Litvinova, A. O.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Spectral characteristics of spontaneous Raman scattering in the submicrometer diamond membrane grown by the hydrogen implantation method are studied in comparison with the single-crystal diamond matrix. A shift in the main line of diamond one-photon excitation (sp3-hybridization) at a frequency of 1324 cm−1 is revealed in the diamond membrane. This fact indicates multiple internal strains (residual compression strains) due to residual defects and is a concequence of the use of the hydrogen implantation method (hydrogen is implanted into diamond to form a sacrificial layer.

AB - Spectral characteristics of spontaneous Raman scattering in the submicrometer diamond membrane grown by the hydrogen implantation method are studied in comparison with the single-crystal diamond matrix. A shift in the main line of diamond one-photon excitation (sp3-hybridization) at a frequency of 1324 cm−1 is revealed in the diamond membrane. This fact indicates multiple internal strains (residual compression strains) due to residual defects and is a concequence of the use of the hydrogen implantation method (hydrogen is implanted into diamond to form a sacrificial layer.

KW - hydrogen ion implantation

KW - lift-off technique

KW - optically active NV-centers

KW - Raman scattering

KW - single-crystal CVD HPHT-diamond membrane

UR - http://www.scopus.com/inward/record.url?scp=85026891417&partnerID=8YFLogxK

U2 - 10.3103/S1068335617070065

DO - 10.3103/S1068335617070065

M3 - Article

AN - SCOPUS:85026891417

VL - 44

SP - 210

EP - 214

JO - Bulletin of the Lebedev Physics Institute

JF - Bulletin of the Lebedev Physics Institute

SN - 1068-3356

IS - 7

ER -

ID: 25723152