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Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions. / Kartashov, I. A.; Podlesnyi, S. N.; Antonov, V. A. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 59, No. 6, 12.2023, p. 677-685.

Research output: Contribution to journal › Article › peer-review

Harvard

Kartashov, IA, Podlesnyi, SN, Antonov, VA, Popov, VP & Pal’yanov, YN 2023, 'Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions', Optoelectronics, Instrumentation and Data Processing, vol. 59, no. 6, pp. 677-685. https://doi.org/10.3103/S8756699023060067

APA

Kartashov, I. A., Podlesnyi, S. N., Antonov, V. A., Popov, V. P., & Pal’yanov, Y. N. (2023). Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions. Optoelectronics, Instrumentation and Data Processing, 59(6), 677-685. https://doi.org/10.3103/S8756699023060067

Vancouver

Kartashov IA, Podlesnyi SN, Antonov VA, Popov VP, Pal’yanov YN. Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions. Optoelectronics, Instrumentation and Data Processing. 2023 Dec;59(6):677-685. doi: 10.3103/S8756699023060067

Author

Kartashov, I. A. ; Podlesnyi, S. N. ; Antonov, V. A. et al. / Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions. In: Optoelectronics, Instrumentation and Data Processing. 2023 ; Vol. 59, No. 6. pp. 677-685.

BibTeX

@article{f34757aecf8d45c2b04b0932c19f8e77,
title = "Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions",
abstract = "The spectral characteristics of the optically detected magnetic resonance of negatively charged nitrogen–vacancy (NV) centers in synthetic diamonds and nanopillars on their surface formed by a focused Ga ion beam, when the lower spin sublevels are populated with microwave radiation, are studied. In the course of studies for emerging spin resonances at different values of the external magnetic field, both a significant decrease in the gyromagnetic ratio and a significant drop in the photoluminescence contrast are revealed for the directions of the NV centers inclined to the axis of the nanopillars due to residual defects from ion etching recorded on Raman spectra in the form of peaks from amorphous carbon and graphite and the stresses they create.",
keywords = "Raman scattering, artificial diamond, nanostructures with NV centers, optical detection of magnetic resonances",
author = "Kartashov, {I. A.} and Podlesnyi, {S. N.} and Antonov, {V. A.} and Popov, {V. P.} and Pal{\textquoteright}yanov, {Yu N.}",
note = "This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-15-2020-797 (13.1902.21.0024)). Публикация для корректировки.",
year = "2023",
month = dec,
doi = "10.3103/S8756699023060067",
language = "English",
volume = "59",
pages = "677--685",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of Diamond after Etching with a Focused Beam of Ga Ions

AU - Kartashov, I. A.

AU - Podlesnyi, S. N.

AU - Antonov, V. A.

AU - Popov, V. P.

AU - Pal’yanov, Yu N.

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-15-2020-797 (13.1902.21.0024)). Публикация для корректировки.

PY - 2023/12

Y1 - 2023/12

N2 - The spectral characteristics of the optically detected magnetic resonance of negatively charged nitrogen–vacancy (NV) centers in synthetic diamonds and nanopillars on their surface formed by a focused Ga ion beam, when the lower spin sublevels are populated with microwave radiation, are studied. In the course of studies for emerging spin resonances at different values of the external magnetic field, both a significant decrease in the gyromagnetic ratio and a significant drop in the photoluminescence contrast are revealed for the directions of the NV centers inclined to the axis of the nanopillars due to residual defects from ion etching recorded on Raman spectra in the form of peaks from amorphous carbon and graphite and the stresses they create.

AB - The spectral characteristics of the optically detected magnetic resonance of negatively charged nitrogen–vacancy (NV) centers in synthetic diamonds and nanopillars on their surface formed by a focused Ga ion beam, when the lower spin sublevels are populated with microwave radiation, are studied. In the course of studies for emerging spin resonances at different values of the external magnetic field, both a significant decrease in the gyromagnetic ratio and a significant drop in the photoluminescence contrast are revealed for the directions of the NV centers inclined to the axis of the nanopillars due to residual defects from ion etching recorded on Raman spectra in the form of peaks from amorphous carbon and graphite and the stresses they create.

KW - Raman scattering

KW - artificial diamond

KW - nanostructures with NV centers

KW - optical detection of magnetic resonances

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85189026889&origin=inward&txGid=2ed3b4c407a8641fd972d2f1bf006a32

UR - https://www.mendeley.com/catalogue/0d3d1e69-a824-3699-a11d-ead9be9d9093/

U2 - 10.3103/S8756699023060067

DO - 10.3103/S8756699023060067

M3 - Article

VL - 59

SP - 677

EP - 685

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -

ID: 59887599