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Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations. / Mantion, S.; Avogadri, C.; Krishtopenko, S. S. et al.

In: Physical Review B, Vol. 102, No. 7, 075302, 15.08.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Mantion, S, Avogadri, C, Krishtopenko, SS, Gebert, S, Ruffenach, S, Consejo, C, Morozov, SV, Mikhailov, NN, Dvoretskii, SA, Knap, W, Nanot, S, Teppe, F & Jouault, B 2020, 'Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations', Physical Review B, vol. 102, no. 7, 075302. https://doi.org/10.1103/PhysRevB.102.075302

APA

Mantion, S., Avogadri, C., Krishtopenko, S. S., Gebert, S., Ruffenach, S., Consejo, C., Morozov, S. V., Mikhailov, N. N., Dvoretskii, S. A., Knap, W., Nanot, S., Teppe, F., & Jouault, B. (2020). Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations. Physical Review B, 102(7), [075302]. https://doi.org/10.1103/PhysRevB.102.075302

Vancouver

Mantion S, Avogadri C, Krishtopenko SS, Gebert S, Ruffenach S, Consejo C et al. Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations. Physical Review B. 2020 Aug 15;102(7):075302. doi: 10.1103/PhysRevB.102.075302

Author

Mantion, S. ; Avogadri, C. ; Krishtopenko, S. S. et al. / Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations. In: Physical Review B. 2020 ; Vol. 102, No. 7.

BibTeX

@article{fc24e9c24a41417f980a6b908458d577,
title = "Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations",
abstract = "We investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements. In the conduction band, several integer quantum Hall states were observed, corresponding to filling factors ν=1,2,3,4. For magnetic fields above 2 T, quantum Hall states ν=0 were observed in the normal gap. These observations agreed well with the previous studies of quantum Hall states on GaAs QWs and graphene. Interestingly, TFs corresponding to anomalous positive filling factor ν were clearly observed in the valence band. We attribute the emergence of those TFs to the localization and charging of the heavy holes located in the side maxima of the valence band.",
keywords = "LOCALIZATION, GRAPHENE",
author = "S. Mantion and C. Avogadri and Krishtopenko, {S. S.} and S. Gebert and S. Ruffenach and C. Consejo and Morozov, {S. V.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and W. Knap and S. Nanot and F. Teppe and B. Jouault",
note = "This work was supported by the CNRS via the IRP {"}TeraMIR,{"} Montpellier University through the {"}Occitanie Terahertz Platform,{"} Russian Science Foundation (RSF-ANR) Grant No. 20-42-09039, the French Agence Nationale pour la Recherche (Colector and Dirac3D projects), and the European Union (Flag-Era JTC 2019-DeMeGras). Sample characterization was performed in the frame of the RSF-ANR Colector project. This project received funding from the European Union's Horizon 2020 research and innovation program under Marie Sklodowska-Curie Grant Agreement No. 765426 (TeraApps). We thank F. Geniet and C. Lhenoret for fruitful discussions.",
year = "2020",
month = aug,
day = "15",
doi = "10.1103/PhysRevB.102.075302",
language = "English",
volume = "102",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations

AU - Mantion, S.

AU - Avogadri, C.

AU - Krishtopenko, S. S.

AU - Gebert, S.

AU - Ruffenach, S.

AU - Consejo, C.

AU - Morozov, S. V.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Knap, W.

AU - Nanot, S.

AU - Teppe, F.

AU - Jouault, B.

N1 - This work was supported by the CNRS via the IRP "TeraMIR," Montpellier University through the "Occitanie Terahertz Platform," Russian Science Foundation (RSF-ANR) Grant No. 20-42-09039, the French Agence Nationale pour la Recherche (Colector and Dirac3D projects), and the European Union (Flag-Era JTC 2019-DeMeGras). Sample characterization was performed in the frame of the RSF-ANR Colector project. This project received funding from the European Union's Horizon 2020 research and innovation program under Marie Sklodowska-Curie Grant Agreement No. 765426 (TeraApps). We thank F. Geniet and C. Lhenoret for fruitful discussions.

PY - 2020/8/15

Y1 - 2020/8/15

N2 - We investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements. In the conduction band, several integer quantum Hall states were observed, corresponding to filling factors ν=1,2,3,4. For magnetic fields above 2 T, quantum Hall states ν=0 were observed in the normal gap. These observations agreed well with the previous studies of quantum Hall states on GaAs QWs and graphene. Interestingly, TFs corresponding to anomalous positive filling factor ν were clearly observed in the valence band. We attribute the emergence of those TFs to the localization and charging of the heavy holes located in the side maxima of the valence band.

AB - We investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements. In the conduction band, several integer quantum Hall states were observed, corresponding to filling factors ν=1,2,3,4. For magnetic fields above 2 T, quantum Hall states ν=0 were observed in the normal gap. These observations agreed well with the previous studies of quantum Hall states on GaAs QWs and graphene. Interestingly, TFs corresponding to anomalous positive filling factor ν were clearly observed in the valence band. We attribute the emergence of those TFs to the localization and charging of the heavy holes located in the side maxima of the valence band.

KW - LOCALIZATION

KW - GRAPHENE

UR - http://www.scopus.com/inward/record.url?scp=85090122001&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.102.075302

DO - 10.1103/PhysRevB.102.075302

M3 - Article

AN - SCOPUS:85090122001

VL - 102

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 7

M1 - 075302

ER -

ID: 25302907