Standard

Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region. / Bloshkin, A. A.; Yakimov, A. I.; Dvurechenskii, A. V.

In: Semiconductors, Vol. 53, No. 2, 01.02.2019, p. 195-199.

Research output: Contribution to journal › Article › peer-review

Harvard

Bloshkin, AA, Yakimov, AI & Dvurechenskii, AV 2019, 'Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region', Semiconductors, vol. 53, no. 2, pp. 195-199. https://doi.org/10.1134/S1063782619020039

APA

Bloshkin, A. A., Yakimov, A. I., & Dvurechenskii, A. V. (2019). Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region. Semiconductors, 53(2), 195-199. https://doi.org/10.1134/S1063782619020039

Vancouver

Bloshkin AA, Yakimov AI, Dvurechenskii AV. Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region. Semiconductors. 2019 Feb 1;53(2):195-199. doi: 10.1134/S1063782619020039

Author

Bloshkin, A. A. ; Yakimov, A. I. ; Dvurechenskii, A. V. / Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region. In: Semiconductors. 2019 ; Vol. 53, No. 2. pp. 195-199.

BibTeX

@article{95949960aa8a4436a86c6192a3a27092,
title = "Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region",
abstract = "Abstract: The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 μm, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is ~3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.",
keywords = "NOISE",
author = "Bloshkin, {A. A.} and Yakimov, {A. I.} and Dvurechenskii, {A. V.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1134/S1063782619020039",
language = "English",
volume = "53",
pages = "195--199",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

AU - Bloshkin, A. A.

AU - Yakimov, A. I.

AU - Dvurechenskii, A. V.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Abstract: The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 μm, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is ~3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.

AB - Abstract: The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 μm, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is ~3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.

KW - NOISE

UR - http://www.scopus.com/inward/record.url?scp=85064935704&partnerID=8YFLogxK

U2 - 10.1134/S1063782619020039

DO - 10.1134/S1063782619020039

M3 - Article

AN - SCOPUS:85064935704

VL - 53

SP - 195

EP - 199

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 20050225